TIP115 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS 3 2 LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT TO-220 DESCRIPTION The TIP110 and TIP112 are silicon Epitaxial-Base NPN

PNP EPITAXIAL TIP115/116/117 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN TO-220 MIN h =1000 @ V = -4V, I = -1A FE CE C LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complementary to TIP110/111/112 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage TIP115 VCBO -60

MCC TIP115 Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components TIP116 CA 91311 Phone (818) 701-4933 TIP117 Fax (818) 701-4939 Features High DC Current Gain hFE=1000 @ VCE=4.0V, IC=1.0A(Min.) Low Collector-Emitter Saturation Voltage PNP Epitaxial Complementary to TIP110/111/112 Lead Free Finish/RoHS Compliant (Note1) ("

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon www.onsemi.com Transistors DARLINGTON Designed for general-purpose amplifier and low-speed switching applications. 2 AMPERE COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain - hFE = 2500 (Typ) @ IC 60-80-100 VOLTS, 50 WATTS = 1.0 Adc Collector-Emitt

isc Silicon PNP Darlington Power Transistor TIP115 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -1A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.5V(Max)@ I = -2A CE(sat) C Complement to Type TIP110 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT

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TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP110, and TIP112 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications. 3 2 The complementary PNP types are TIP1

NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN TO-220 MIN h =1000 @ V =4V, I =1A FE CE C LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complementary to TIP115/116/117 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage TIP110 VCBO 60 V 1

MCC Micro Commercial Components TM TIP110/111/112 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features The complementary PNP types are the TIP115/116/117 respectively Silicon NPN Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Darlington Epoxy

UNISONIC TECHNOLOGIES CO., LTD TIP112 NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP112 is designed for such applications as DC/DC converters supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. relays, buzzers and

UNISONIC TECHNOLOGIES CO., LTD TIP110A Preliminary PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP110A is designed for using in general purpose amplifier and switching applications. FEATURES * Low VCE(SAT) * High Current Gain ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Fre

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP110 TIP115 TIP111 TIP116 TIP112 TIP117 NPN PNP TO-220 Plastic Package Intended for use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL TIP110/115 TIP111/116 TIP112/117 UNIT VCEO Collector Emitter Voltage 60

SEMICONDUCTOR TIP112 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN A BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. R S FEATURES P D High DC Current Gain. DIM MILLIMETERS hFE=1000(Min.), VCE=4V, IC=1A. A 10.30 MAX B 15.30 MAX Low Collector-Emitter Saturation Voltage. C 0.80 _ + Complementary to TIP117. D 3.60 0.20 T E 3.00 F

SEMICONDUCTOR TIP117 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN A BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. R S FEATURES P D High DC Current Gain. DIM MILLIMETERS hFE=1000(Min.), VCE=-4V, IC=-1A. A 10.30 MAX B 15.30 MAX Low Collector-Emitter Saturation Voltage. C 0.80 _ + Complementary to TIP112. D 3.60 0.20 T E 3.00

SEMICONDUCTOR TIP112F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A C DIM MILLIMETERS S _ FEATURES A 10.0 + 0.3 _ + B 15.0 0.3 E High DC Current Gain. C _ 2.70 0.3 + D 0.76+0.09/-0.05 hFE=1000(Min.), VCE=4V, IC=1A. _ E 3.2 0.2 + _ F 3.0 0.3 + Low Collector-Emitter Saturation Volta

SEMICONDUCTOR TIP117F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A C DIM MILLIMETERS S _ FEATURES A 10.0 + 0.3 _ + B 15.0 0.3 E High DC Current Gain. C _ 2.70 0.3 + D 0.76+0.09/-0.05 hFE=1000(Min.), VCE=-4V, IC=-1A. _ E 3.2 0.2 + _ F 3.0 0.3 + Low Collector-Emitter Saturation Vol

TIP112 TO-220 Darlington Transistor (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features High DC Current Gain hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 100 V VCE

TIP110 TO-220 Darlington Transistor (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features High DC Current Gain hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 60 V VCEO Co

TIP111 TO-220 Darlington Transistor (NPN) 1. BASE TO-220 2. COLLECTOR 3. EMITTER 3 2 1 Features High DC Current Gain hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V Dimensions in inches and (millimeters) V

Spec. No. HE200204 HI-SINCERITY Issued Date 2000.08.01 Revised Date 2004.11.19 MICROELECTRONICS CORP. Page No. 1/4 HTIP117 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP117 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25 C) B Maximum Temperatures Storage Temp

Spec. No. HE200203 HI-SINCERITY Issued Date 2000.08.01 Revised Date 2004.11.19 MICROELECTRONICS CORP. Page No. 1/5 HTIP112 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP112 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25 C) B Maximum Temperatures Storage Temp

DARLINGTON COMPLEMENTARY POWER TRANSISTORS R TIP112/TIP117 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform power amplifier circuit FEATURES Hi

TIP117(3CA117) PNP /SILICON PNP TRANSISTOR Purpose Medium power linear switching applications. TIP112(3DA112) Features Complement to TIP112(3DA112). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V EBO

isc Silicon NPN Darlington Power Transistor TIP112 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.5V(Max)@ I = 2A CE(sat) C Complement to Type TIP117 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

isc Silicon PNP Darlington Power Transistor TIP117 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -1A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.5V(Max)@ I = -2A CE(sat) C Complement to Type TIP112 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA

isc Silicon NPN Darlington Power Transistor TIP110 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.5V(Max)@ I = 2A CE(sat) C Complement to Type TIP115 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

isc Silicon PNP Darlington Power Transistor TIP116 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -1A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.5V(Max)@ I = -2A CE(sat) C Complement to Type TIP111 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT

isc Silicon NPN Darlington Power Transistor TIP111 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.5V(Max)@ I = 2A CE(sat) C Complement to Type TIP116 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS