TIP136 Todos los transistores

TIP130/131/132 TIP135/136/137 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n TIP131, TIP132, TIP135 AND TIP137 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP130, TIP131 and TIP132 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching appl

isc Silicon PNP Darlington Power Transistor TIP136 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -4A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -4A CE(sat) C Complement to Type TIP131 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT

TIP131/TIP132 TIP135/TIP137 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP131, TIP132, TIP135 AND TIP137 ARE SGS-THOMSON PREFERRED SALESTYPES APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 1 DESCRIPTION The TIP131 and TIP132 are silicon epitaxial-base TO-220 NPN power transistors in monolithic Darlington configuration, mounted in Jedec TO-220 plastic p

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP130 TIP135 TIP131 TIP136 TIP132 TIP137 NPN PNP TO-220 Plastic Package Intended for use in Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL TIP130/135 TIP131/136 TIP132/137 UNIT VCEO Collector Emitter Voltage 60 80 100 V Col

isc Silicon NPN Darlington Power Transistor TIP130 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 4A CE(sat) C Complement to Type TIP135 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP132 DESCRIPTION High DC Current Gain- hFE = 1000(Min)@ IC= 4A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 100V(Min) Low Collector-Emitter Saturation Voltage- VCE(sat) = 2.0V(Max)@ IC= 4A Complement to Type TIP137 APPLICATIONS Designed for general-purpose

isc Silicon PNP Darlington Power Transistor TIP135 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -4A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -4A CE(sat) C Complement to Type TIP130 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT

isc Silicon PNP Darlington Power Transistor TIP137 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -4A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -4A CE(sat) C Complement to Type TIP132 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA

isc Silicon NPN Darlington Power Transistor TIP131 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 4A CE(sat) C Complement to Type TIP136 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS