TIP141 Todos los transistores

TIP140/141/142 TIP145/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARE STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 3 2 APPLICATIONS 1 LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT TO-218 DESCRIPTION The TI

TIP141/142 TIP146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP141and TIP142 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in TO-218 plastic package. They are intented for use in power linear and switching applications. 3 The complementary PNP types are TIP146 an

isc Silicon NPN Darlington Power Transistor TIP141 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type TIP146 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applicati

isc Silicon NPN Darlington Power Transistor TIP141F DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type TIP146F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applica

isc Silicon NPN Darlington Power Transistor TIP141T DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type TIP146T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching application

Order this document MOTOROLA by TIP140/D SEMICONDUCTOR TECHNICAL DATA NPN TIP140 Darlington Complementary TIP141* Silicon Power Transistors . . . designed for general purpose amplifier and low frequency switching applications. TIP142* PNP High DC Current Gain Min hFE = 1000 @ IC = 5 A, VCE = 4 V Collector Emitter Sustaining Voltage @ 30 mA TIP145 VCEO(sus) = 60

TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION LOW VOLTAGE HIGH CURRENT HIGH GAIN APPLICATIONS 3 2 GENERAL PURPOSE SWITCHING 1 DESCRIPTION TO-220 The TIP142T is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration, mo

TIP140T/141T/142T Monolithic Construction With Built In Base- Emitter Shunt Resistors High DC Current Gain hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Val

TIP145F/146F/147F Monolithic Construction With Built In Base- Emitter Shunt Resistors High DC Current Gain hFE = 1000 @ VCE = -4V, IC = -5A (Min.) Industrial Use Complement to TIP140F/141F/142F TO-3PF 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value

TIP140F/141F/142F Monolithic Construction With Built In Base- Emitter Shunt Resistors Complement to TIP145F/146F/147F High DC Current Gain hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Uni

PNP EPITAXIAL TIP145F/146F/147F DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN TO-3PF MIN h = 1000 @ V = -4V, IC = -5A FE CE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complement to TIP140F/141F/142F ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage VCBO V TIP145F - 60 V TIP146F - 80 V TIP147F -

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR POWER DARLINGTON TRANSISTORS TIP142T NPN TIP147T PNP TO-220 Plastic Package For use in Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 100 V Emitter Base Voltage VEBO

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140, 141, 142 NPN TIP145, 146, 147 PNP TO- 3PN Non Isolated Plastic Package Designed for General Purpose Amplifier and Low Frequency Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL TIP140 TIP141 TIP142 UNIT TIP145 TIP146 TIP147 C

DARLINGTON COMPLEMENTARY POWER TRANSISTORS R TIP142/TIP147 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES

TIP142T(3DA142T) NPN /SILICON NPN TRANSISTOR Purpose Linear and switching industrial equipment. - TIP147T(3CA147T) Features Monolithic construction with built in base-emitter shunt resistors High DC current gain complement to TIP147T(

SPTECH Product Specification SPTECH Silicon NPN Darlington Power Transistor TIP142T DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP147T APPLICATIONS Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

isc Silicon PNP Darlington Power Transistor TIP147 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type TIP142 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applic

isc Silicon NPN Darlington Power Transistor TIP142T DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP147T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applicatio

isc Silicon PNP Darlington Power Transistor TIP146 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to Type TIP141 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applica

isc Silicon PNP Darlington Power Transistor TIP145T DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Complement to Type TIP140T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching appli

isc Silicon NPN Darlington Power Transistor TIP140F DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type TIP145F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applica

isc Silicon PNP Darlington Power Transistor TIP146T DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to Type TIP141T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching appli

isc Silicon PNP Darlington Power Transistor TIP145 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Complement to Type TIP140 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applica

isc Silicon NPN Darlington Power Transistor TIP140 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type TIP145 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applicati

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP142 DESCRIPTION High DC Current Gain- hFE = 1000(Min)@ IC= 5A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 100V(Min) Complement to Type TIP147 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS

isc Silicon NPN Darlington Power Transistor TIP140T DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type TIP145T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching application

isc Silicon NPN Darlington Power Transistor TIP142F DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP147F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applic