TIP141 Datasheet and Replacement

TIP140/141/142TIP145/146/147COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARESTMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 32APPLICATIONS 1 LINEAR AND SWITCHING INDUSTRIALEQUIPMENT TO-218DESCRIPTION The TI

TIP141/142TIP146/147COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe TIP141and TIP142 are silicon epitaxial-baseNPN power transistors in monolithic Darlingtonconfiguration and are mounted in TO-218 plasticpackage. They are intented for use in powerlinear and switching applications.3The complementary PNP types are TIP146 an

isc Silicon NPN Darlington Power Transistor TIP141DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type TIP146Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applicati

isc Silicon NPN Darlington Power Transistor TIP141FDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type TIP146FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applica

isc Silicon NPN Darlington Power Transistor TIP141TDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type TIP146TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching application

Order this documentMOTOROLAby TIP140/DSEMICONDUCTOR TECHNICAL DATANPNTIP140Darlington ComplementaryTIP141*Silicon Power Transistors. . . designed for generalpurpose amplifier and low frequency switching applications. TIP142*PNP High DC Current Gain Min hFE = 1000 @ IC = 5 A, VCE = 4 V CollectorEmitter Sustaining Voltage @ 30 mATIP145VCEO(sus) = 60

TIP142TTIP147TCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION LOW VOLTAGE HIGH CURRENT HIGH GAINAPPLICATIONS 32 GENERAL PURPOSE SWITCHING 1DESCRIPTION TO-220The TIP142T is a silicon epitaxial-base NPNpower transistor in monolithic Darlingtonconfiguration, mo

TIP140T/141T/142TMonolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use Complement to TIP145T/146T/147TTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitSymbol Parameter Val

TIP145F/146F/147FMonolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) Industrial Use Complement to TIP140F/141F/142FTO-3PF11.Base 2.Collector 3.EmitterPNP Epitaxial Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitCSymbol Parameter Value

TIP140F/141F/142FMonolithic Construction With Built In Base-Emitter Shunt Resistors Complement to TIP145F/146F/147F High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial UseTO-3PF11.Base 2.Collector 3.EmitterNPN Epitaxial Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitCSymbol Parameter Value Uni

PNP EPITAXIALTIP145F/146F/147F DARLINGTON TRANSISTORHIGH DC CURRENT GAINTO-3PFMIN h = 1000 @ V = -4V, IC = -5AFE CEMONOLITHIC CONSTRUCTION WITH BUILTIN BASE-EMITTER SHUNT RESISTORSINDUSTRIAL USEComplement to TIP140F/141F/142FABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Emitter Voltage VCBOV: TIP145F - 60V: TIP146F - 80V: TIP147F -

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR POWER DARLINGTON TRANSISTORS TIP142T NPNTIP147T PNPTO-220Plastic PackageFor use in Power Linear and Switching ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCEO 100 VEmitter Base Voltage VEBO

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140, 141, 142 NPNTIP145, 146, 147 PNPTO- 3PN Non IsolatedPlastic PackageDesigned for General Purpose Amplifier and Low Frequency Switching ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL TIP140 TIP141 TIP142 UNITTIP145 TIP146 TIP147C

DARLINGTON COMPLEMENTARY POWER TRANSISTORS RTIP142/TIP147 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES

TIP142T(3DA142T) NPN /SILICON NPN TRANSISTOR : Purpose: Linear and switching industrial equipment. : - TIP147T(3CA147T) Features: Monolithic construction with built in base-emitter shunt resistorsHigh DC current gain complement to TIP147T(

SPTECH Product SpecificationSPTECH Silicon NPN Darlington Power Transistor TIP142TDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP147TAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

isc Silicon PNP Darlington Power Transistor TIP147DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Complement to Type TIP142Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applic

isc Silicon NPN Darlington Power Transistor TIP142TDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP147TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicatio

isc Silicon PNP Darlington Power Transistor TIP146DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Complement to Type TIP141Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applica

isc Silicon PNP Darlington Power Transistor TIP145TDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type TIP140TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching appli

isc Silicon NPN Darlington Power Transistor TIP140FDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type TIP145FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applica

isc Silicon PNP Darlington Power Transistor TIP146TDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Complement to Type TIP141TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching appli

isc Silicon PNP Darlington Power Transistor TIP145DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type TIP140Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applica

isc Silicon NPN Darlington Power Transistor TIP140DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type TIP145Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applicati

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP142 DESCRIPTION High DC Current Gain- : hFE = 1000(Min)@ IC= 5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) Complement to Type TIP147 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS

isc Silicon NPN Darlington Power Transistor TIP140TDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type TIP145TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching application

isc Silicon NPN Darlington Power Transistor TIP142FDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP147FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applic