TIP141 Datasheet. Specs and Replacement
Type Designator: TIP141
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: TO218
- BJT ⓘ Cross-Reference Search
TIP141 datasheet
..1. Size:48K st
tip140 tip141 tip142 tip145 tip146 tip147 .pdf 
TIP140/141/142 TIP145/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARE STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 3 2 APPLICATIONS 1 LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT TO-218 DESCRIPTION The TI... See More ⇒
..2. Size:38K st
tip141.pdf
TIP141/142 TIP146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP141and TIP142 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in TO-218 plastic package. They are intented for use in power linear and switching applications. 3 The complementary PNP types are TIP146 an... See More ⇒
..3. Size:223K inchange semiconductor
tip141.pdf
isc Silicon NPN Darlington Power Transistor TIP141 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type TIP146 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applicati... See More ⇒
0.1. Size:223K inchange semiconductor
tip141f.pdf
isc Silicon NPN Darlington Power Transistor TIP141F DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type TIP146F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applica... See More ⇒
0.2. Size:215K inchange semiconductor
tip141t.pdf
isc Silicon NPN Darlington Power Transistor TIP141T DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type TIP146T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching application... See More ⇒
9.1. Size:234K motorola
tip140re.pdf
Order this document MOTOROLA by TIP140/D SEMICONDUCTOR TECHNICAL DATA NPN TIP140 Darlington Complementary TIP141* Silicon Power Transistors . . . designed for general purpose amplifier and low frequency switching applications. TIP142* PNP High DC Current Gain Min hFE = 1000 @ IC = 5 A, VCE = 4 V Collector Emitter Sustaining Voltage @ 30 mA TIP145 VCEO(sus) = 60... See More ⇒
9.2. Size:57K st
tip142t tip147t.pdf
TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION LOW VOLTAGE HIGH CURRENT HIGH GAIN APPLICATIONS 3 2 GENERAL PURPOSE SWITCHING 1 DESCRIPTION TO-220 The TIP142T is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration, mo... See More ⇒
9.3. Size:52K fairchild semi
tip142t.pdf
TIP140T/141T/142T Monolithic Construction With Built In Base- Emitter Shunt Resistors High DC Current Gain hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Val... See More ⇒
9.4. Size:62K fairchild semi
tip147f.pdf
TIP145F/146F/147F Monolithic Construction With Built In Base- Emitter Shunt Resistors High DC Current Gain hFE = 1000 @ VCE = -4V, IC = -5A (Min.) Industrial Use Complement to TIP140F/141F/142F TO-3PF 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value ... See More ⇒
9.5. Size:62K fairchild semi
tip142f.pdf
TIP140F/141F/142F Monolithic Construction With Built In Base- Emitter Shunt Resistors Complement to TIP145F/146F/147F High DC Current Gain hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Uni... See More ⇒
9.6. Size:59K samsung
tip145f.pdf
PNP EPITAXIAL TIP145F/146F/147F DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN TO-3PF MIN h = 1000 @ V = -4V, IC = -5A FE CE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complement to TIP140F/141F/142F ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage VCBO V TIP145F - 60 V TIP146F - 80 V TIP147F -... See More ⇒
9.7. Size:410K cdil
tip142t 47t.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR POWER DARLINGTON TRANSISTORS TIP142T NPN TIP147T PNP TO-220 Plastic Package For use in Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 100 V Emitter Base Voltage VEBO ... See More ⇒
9.8. Size:321K cdil
tip140-tip147.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140, 141, 142 NPN TIP145, 146, 147 PNP TO- 3PN Non Isolated Plastic Package Designed for General Purpose Amplifier and Low Frequency Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL TIP140 TIP141 TIP142 UNIT TIP145 TIP146 TIP147 C... See More ⇒
9.9. Size:600K jilin sino
tip142 tip147.pdf
DARLINGTON COMPLEMENTARY POWER TRANSISTORS R TIP142/TIP147 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES ... See More ⇒
9.10. Size:518K lzg
tip142t 3da142t.pdf
TIP142T(3DA142T) NPN /SILICON NPN TRANSISTOR Purpose Linear and switching industrial equipment. - TIP147T(3CA147T) Features Monolithic construction with built in base-emitter shunt resistors High DC current gain complement to TIP147T(... See More ⇒
9.11. Size:173K cn sptech
tip142t.pdf
SPTECH Product Specification SPTECH Silicon NPN Darlington Power Transistor TIP142T DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP147T APPLICATIONS Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒
9.12. Size:222K inchange semiconductor
tip147.pdf
isc Silicon PNP Darlington Power Transistor TIP147 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type TIP142 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applic... See More ⇒
9.13. Size:215K inchange semiconductor
tip142t.pdf
isc Silicon NPN Darlington Power Transistor TIP142T DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP147T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applicatio... See More ⇒
9.14. Size:223K inchange semiconductor
tip146.pdf
isc Silicon PNP Darlington Power Transistor TIP146 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to Type TIP141 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applica... See More ⇒
9.15. Size:215K inchange semiconductor
tip145t.pdf
isc Silicon PNP Darlington Power Transistor TIP145T DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Complement to Type TIP140T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching appli... See More ⇒
9.16. Size:223K inchange semiconductor
tip140f.pdf
isc Silicon NPN Darlington Power Transistor TIP140F DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type TIP145F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applica... See More ⇒
9.17. Size:216K inchange semiconductor
tip146t.pdf
isc Silicon PNP Darlington Power Transistor TIP146T DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to Type TIP141T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching appli... See More ⇒
9.18. Size:222K inchange semiconductor
tip145.pdf
isc Silicon PNP Darlington Power Transistor TIP145 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Complement to Type TIP140 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applica... See More ⇒
9.19. Size:222K inchange semiconductor
tip140.pdf
isc Silicon NPN Darlington Power Transistor TIP140 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type TIP145 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applicati... See More ⇒
9.20. Size:164K inchange semiconductor
tip142.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP142 DESCRIPTION High DC Current Gain- hFE = 1000(Min)@ IC= 5A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 100V(Min) Complement to Type TIP147 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS... See More ⇒
9.21. Size:215K inchange semiconductor
tip140t.pdf
isc Silicon NPN Darlington Power Transistor TIP140T DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type TIP145T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching application... See More ⇒
9.22. Size:223K inchange semiconductor
tip142f.pdf
isc Silicon NPN Darlington Power Transistor TIP142F DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP147F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applic... See More ⇒
Detailed specifications: TIP131, TIP132, TIP135, TIP136, TIP137, TIP140, TIP140F, TIP140T, BC548, TIP141F, TIP141T, TIP142, TIP142F, TIP142T, TIP145, TIP145F, TIP145T
Keywords - TIP141 pdf specs
TIP141 cross reference
TIP141 equivalent finder
TIP141 pdf lookup
TIP141 substitution
TIP141 replacement
