TIP145 Datasheet. Equivalente

 ..1. Size:48K  st
 tip140 tip141 tip142 tip145 tip146 tip147 .pdf

TIP140/141/142 TIP145/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARE STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 3 2 APPLICATIONS 1 LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT TO-218 DESCRIPTION The TI

 ..2. Size:222K  inchange semiconductor
 tip145.pdf

isc Silicon PNP Darlington Power Transistor TIP145 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Complement to Type TIP140 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applica

 0.1. Size:59K  samsung
 tip145f.pdf

PNP EPITAXIAL TIP145F/146F/147F DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN TO-3PF MIN h = 1000 @ V = -4V, IC = -5A FE CE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complement to TIP140F/141F/142F ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage VCBO V TIP145F - 60 V TIP146F - 80 V TIP147F -

 0.2. Size:215K  inchange semiconductor
 tip145t.pdf

isc Silicon PNP Darlington Power Transistor TIP145T DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Complement to Type TIP140T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching appli

 9.1. Size:234K  motorola
 tip140re.pdf

Order this document MOTOROLA by TIP140/D SEMICONDUCTOR TECHNICAL DATA NPN TIP140 Darlington Complementary TIP141* Silicon Power Transistors . . . designed for general purpose amplifier and low frequency switching applications. TIP142* PNP High DC Current Gain Min hFE = 1000 @ IC = 5 A, VCE = 4 V Collector Emitter Sustaining Voltage @ 30 mA TIP145 VCEO(sus) = 60

 9.2. Size:57K  st
 tip142t tip147t.pdf

TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION LOW VOLTAGE HIGH CURRENT HIGH GAIN APPLICATIONS 3 2 GENERAL PURPOSE SWITCHING 1 DESCRIPTION TO-220 The TIP142T is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration, mo

 9.3. Size:38K  st
 tip141.pdf

TIP141/142 TIP146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP141and TIP142 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in TO-218 plastic package. They are intented for use in power linear and switching applications. 3 The complementary PNP types are TIP146 an

 9.4. Size:52K  fairchild semi
 tip142t.pdf

TIP140T/141T/142T Monolithic Construction With Built In Base- Emitter Shunt Resistors High DC Current Gain hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Val

 9.5. Size:62K  fairchild semi
 tip147f.pdf

TIP145F/146F/147F Monolithic Construction With Built In Base- Emitter Shunt Resistors High DC Current Gain hFE = 1000 @ VCE = -4V, IC = -5A (Min.) Industrial Use Complement to TIP140F/141F/142F TO-3PF 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value

 9.6. Size:62K  fairchild semi
 tip142f.pdf

TIP140F/141F/142F Monolithic Construction With Built In Base- Emitter Shunt Resistors Complement to TIP145F/146F/147F High DC Current Gain hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Uni

 9.7. Size:410K  cdil
 tip142t 47t.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR POWER DARLINGTON TRANSISTORS TIP142T NPN TIP147T PNP TO-220 Plastic Package For use in Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 100 V Emitter Base Voltage VEBO

 9.8. Size:321K  cdil
 tip140-tip147.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140, 141, 142 NPN TIP145, 146, 147 PNP TO- 3PN Non Isolated Plastic Package Designed for General Purpose Amplifier and Low Frequency Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL TIP140 TIP141 TIP142 UNIT TIP145 TIP146 TIP147 C

 9.9. Size:600K  jilin sino
 tip142 tip147.pdf

DARLINGTON COMPLEMENTARY POWER TRANSISTORS R TIP142/TIP147 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES

 9.10. Size:518K  lzg
 tip142t 3da142t.pdf

TIP142T(3DA142T) NPN /SILICON NPN TRANSISTOR Purpose Linear and switching industrial equipment. - TIP147T(3CA147T) Features Monolithic construction with built in base-emitter shunt resistors High DC current gain complement to TIP147T(

 9.11. Size:173K  cn sptech
 tip142t.pdf

SPTECH Product Specification SPTECH Silicon NPN Darlington Power Transistor TIP142T DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP147T APPLICATIONS Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 9.12. Size:222K  inchange semiconductor
 tip147.pdf

isc Silicon PNP Darlington Power Transistor TIP147 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type TIP142 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applic

 9.13. Size:215K  inchange semiconductor
 tip142t.pdf

isc Silicon NPN Darlington Power Transistor TIP142T DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP147T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applicatio

 9.14. Size:223K  inchange semiconductor
 tip146.pdf

isc Silicon PNP Darlington Power Transistor TIP146 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to Type TIP141 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applica

 9.15. Size:223K  inchange semiconductor
 tip140f.pdf

isc Silicon NPN Darlington Power Transistor TIP140F DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type TIP145F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applica

 9.16. Size:216K  inchange semiconductor
 tip146t.pdf

isc Silicon PNP Darlington Power Transistor TIP146T DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to Type TIP141T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching appli

 9.17. Size:223K  inchange semiconductor
 tip141f.pdf

isc Silicon NPN Darlington Power Transistor TIP141F DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type TIP146F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applica

 9.18. Size:222K  inchange semiconductor
 tip140.pdf

isc Silicon NPN Darlington Power Transistor TIP140 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type TIP145 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applicati

 9.19. Size:223K  inchange semiconductor
 tip141.pdf

isc Silicon NPN Darlington Power Transistor TIP141 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type TIP146 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applicati

 9.20. Size:164K  inchange semiconductor
 tip142.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP142 DESCRIPTION High DC Current Gain- hFE = 1000(Min)@ IC= 5A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 100V(Min) Complement to Type TIP147 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS

 9.21. Size:215K  inchange semiconductor
 tip140t.pdf

isc Silicon NPN Darlington Power Transistor TIP140T DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type TIP145T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching application

 9.22. Size:223K  inchange semiconductor
 tip142f.pdf

isc Silicon NPN Darlington Power Transistor TIP142F DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP147F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applic

 9.23. Size:215K  inchange semiconductor
 tip141t.pdf

isc Silicon NPN Darlington Power Transistor TIP141T DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type TIP146T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching application