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TIP35C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TIP35C

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 90 W

Tensión colector-base (Vcb): 140 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 25 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 3 MHz

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: TOP3

Búsqueda de reemplazo de transistor bipolar TIP35C

 

TIP35C Datasheet (PDF)

0.1. tip35cp tip36cp.pdf Size:196K _st

TIP35C
TIP35C

TIP35CPTIP36CPComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN-PNP transistorsApplications General purpose3 Audio amplifier 21TO-3PDescriptionThe devices are manufactured in planar Figure 1. Internal schematic diagramstechnology with base island layout. The resulting transistors show excepti

0.2. tip35cw tip36cw.pdf Size:190K _st

TIP35C
TIP35C

TIP35CWTIP36CWComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose32 Audio amplifier1TO-247DescriptionThe devices are manufactured in planar Figure 1. Internal schematic diagramstechnology with base island layout. The resulting transistors show exc

 0.3. tip35c tip36c tip36b.pdf Size:43K _st

TIP35C
TIP35C

TIP35CTIP36B/TIP36CCOMPLEMENTARY SILICON HIGH POWERTRANSISTORS STMicroelectronic PREFERREDSALESTYPESDESCRIPTION The TIP35C is a silicon Epitaxial-Base NPNtransistor mounted in TO-218 plastic package. Itis intented for use in power amplifier andswitching applications.3The complementary PNP type is TIP36C.2Also TIP36B is a PNP type. 1TO-218INTERNAL SCHEMATIC DI

0.4. tip35c tip36c.pdf Size:194K _st

TIP35C
TIP35C

TIP35CTIP36CComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose32 Audio amplifier1TO-247DescriptionThe devices are manufactured in planar Figure 1. Internal schematic diagramstechnology with base island layout. The resulting transistors show excep

 0.5. tip35a tip35b tip35c tip36a tip36b tip36c.pdf Size:80K _onsemi

TIP35C
TIP35C

TIP35A, TIP35B, TIP35C(NPN); TIP36A, TIP36B,TIP36C (PNP)TIP35B, TIP35C, TIP36B, and TIP36C are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comDesigned for general-purpose power amplifier and switchingapplications.25 AMPEREFeaturesCOMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125

0.6. tip35c.pdf Size:138K _utc

TIP35C
TIP35C

UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C. INTERNAL SCHEMATIC DIAGRAM C (2)(1)BE (3) ORDERING INFORMATION Order Number Pin Assignment Package Packing Lea

0.7. tip35ca.pdf Size:440K _kec

TIP35C
TIP35C

SEMICONDUCTOR TIP35CATECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION.AQ BNFEATURESO KRecommended for 75W Audio Frequency DIM MILLIMETERSAmplifier Output Stage. _A +15.60 0.20_B4.80 + 0.20Complementary to TIP36CA._C 19.90 + 0.20_D 2.00 0.20+Icmax:25A. _d +1.00 0.20_E +3.00 0.20_F 3.80 + 0.20D_G 3.50 +

0.8. tip35c.pdf Size:289K _kec

TIP35C
TIP35C

SEMICONDUCTOR TIP35CTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION.A Q BKFEATURESRecommended for 75W Audio Frequency Amplifier Output Stage.DIM MILLIMETERSComplementary to TIP36C.A 15.9 MAXB 4.8 MAXIcmax:25A. _C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0G 3.3 MAXdH 9.0MAXIMUM RATING (Ta=25 )I 4.5P PT J 2.0

0.9. tip35cf.pdf Size:225K _inchange_semiconductor

TIP35C
TIP35C

isc Silicon NPN Power Transistor TIP35CFDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP36CFCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = 1.0AT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in gen

0.10. tip35 tip35a tip35b tip35c.pdf Size:160K _inchange_semiconductor

TIP35C
TIP35C

Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP35/35A/35B/35C DESCRIPTION With TO-3PN package Complement to type TIP36/36A/36B/36C DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base

0.11. tip35c.pdf Size:219K _inchange_semiconductor

TIP35C
TIP35C

isc Silicon NPN Power Transistor TIP35CDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP36CCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = 1.0AT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in gener

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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