All Transistors. TIP35C Datasheet

 

TIP35C Datasheet, Equivalent, Cross Reference Search

Type Designator: TIP35C

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TOP3

TIP35C Transistor Equivalent Substitute - Cross-Reference Search

 

TIP35C Datasheet (PDF)

..1. tip35c tip36c tip36b.pdf Size:43K _st

TIP35C
TIP35C

TIP35CTIP36B/TIP36CCOMPLEMENTARY SILICON HIGH POWERTRANSISTORS STMicroelectronic PREFERREDSALESTYPESDESCRIPTION The TIP35C is a silicon Epitaxial-Base NPNtransistor mounted in TO-218 plastic package. Itis intented for use in power amplifier andswitching applications.3The complementary PNP type is TIP36C.2Also TIP36B is a PNP type. 1TO-218INTERNAL SCHEMATIC DI

..2. tip35c tip36c.pdf Size:194K _st

TIP35C
TIP35C

TIP35CTIP36CComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose32 Audio amplifier1TO-247DescriptionThe devices are manufactured in planar Figure 1. Internal schematic diagramstechnology with base island layout. The resulting transistors show excep

..3. tip35a tip35b tip35c tip36a tip36b tip36c.pdf Size:80K _onsemi

TIP35C
TIP35C

TIP35A, TIP35B, TIP35C(NPN); TIP36A, TIP36B,TIP36C (PNP)TIP35B, TIP35C, TIP36B, and TIP36C are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comDesigned for general-purpose power amplifier and switchingapplications.25 AMPEREFeaturesCOMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125

..4. tip35c.pdf Size:138K _utc

TIP35C
TIP35C

UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C. INTERNAL SCHEMATIC DIAGRAM C (2)(1)BE (3) ORDERING INFORMATION Order Number Pin Assignment Package Packing Lea

..5. tip35c.pdf Size:289K _kec

TIP35C
TIP35C

SEMICONDUCTOR TIP35CTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION.A Q BKFEATURESRecommended for 75W Audio Frequency Amplifier Output Stage.DIM MILLIMETERSComplementary to TIP36C.A 15.9 MAXB 4.8 MAXIcmax:25A. _C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0G 3.3 MAXdH 9.0MAXIMUM RATING (Ta=25 )I 4.5P PT J 2.0

..6. tip35 tip35a tip35b tip35c.pdf Size:160K _inchange_semiconductor

TIP35C
TIP35C

Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP35/35A/35B/35C DESCRIPTION With TO-3PN package Complement to type TIP36/36A/36B/36C DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base

..7. tip35c.pdf Size:219K _inchange_semiconductor

TIP35C
TIP35C

isc Silicon NPN Power Transistor TIP35CDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP36CCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = 1.0AT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in gener

0.1. tip35cp tip36cp.pdf Size:196K _st

TIP35C
TIP35C

TIP35CPTIP36CPComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN-PNP transistorsApplications General purpose3 Audio amplifier 21TO-3PDescriptionThe devices are manufactured in planar Figure 1. Internal schematic diagramstechnology with base island layout. The resulting transistors show excepti

0.2. tip35cw tip36cw.pdf Size:190K _st

TIP35C
TIP35C

TIP35CWTIP36CWComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose32 Audio amplifier1TO-247DescriptionThe devices are manufactured in planar Figure 1. Internal schematic diagramstechnology with base island layout. The resulting transistors show exc

 

 

 

 

 0.3. tip35ca.pdf Size:440K _kec

TIP35C
TIP35C

SEMICONDUCTOR TIP35CATECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION.AQ BNFEATURESO KRecommended for 75W Audio Frequency DIM MILLIMETERSAmplifier Output Stage. _A +15.60 0.20_B4.80 + 0.20Complementary to TIP36CA._C 19.90 + 0.20_D 2.00 0.20+Icmax:25A. _d +1.00 0.20_E +3.00 0.20_F 3.80 + 0.20D_G 3.50 +

0.4. tip35cf.pdf Size:225K _inchange_semiconductor

TIP35C
TIP35C

isc Silicon NPN Power Transistor TIP35CFDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP36CFCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = 1.0AT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in gen

 

 

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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