TIP35C Datasheet. Specs and Replacement
The TIP35C is a high-power NPN bipolar junction transistor designed for demanding audio, power-supply, and motor-control applications. Rated for up to 100V collector-emitter voltage and 25A continuous collector current, it offers robust performance with a peak power dissipation of around 125W when properly heat-sunk. Its high gain and low saturation voltage make it efficient in linear and switching stages. Housed in a durable TO247 package, the TIP35C provides reliable operation under thermal stress, making it a common choice in high-current amplifiers and industrial power drivers.
Type Designator: TIP35C 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO247
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TIP35C datasheet
..1. Size:43K st
tip35c tip36c tip36b.pdf 
TIP35C TIP36B/TIP36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS STMicroelectronic PREFERRED SALESTYPES DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. 3 The complementary PNP type is TIP36C. 2 Also TIP36B is a PNP type. 1 TO-218 INTERNAL SCHEMATIC DI... See More ⇒
..2. Size:190K st
tip35c tip36c.pdf
TIP35C TIP36C Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 3 2 Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show excep... See More ⇒
..3. Size:260K onsemi
tip35a tip35b tip35c tip36a tip36b tip36c.pdf
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors http //onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTS ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain ... See More ⇒
..4. Size:138K utc
tip35c.pdf
UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C. INTERNAL SCHEMATIC DIAGRAM C (2) (1) B E (3) ORDERING INFORMATION Order Number Pin Assignment Package Packing Lea... See More ⇒
..5. Size:289K kec
tip35c.pdf
SEMICONDUCTOR TIP35C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to TIP36C. A 15.9 MAX B 4.8 MAX Icmax 25A. _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX d H 9.0 MAXIMUM RATING (Ta=25 ) I 4.5 P PT J 2.0 ... See More ⇒
..6. Size:525K jilin sino
tip35c.pdf
NPN NPN Epitaxial Silicon Transistor R TIP35C APPLICATIONS Audio amplifier General purpose FEATURES V =100V (min) High collector voltage V =100V (min) CEO CEO Low collector-emitter saturation voltage TIP36C Complementa... See More ⇒
..7. Size:423K cn sptech
tip35c.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor TIP35C DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP36C Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = 1.0A T C APPLICATIONS Designed for use in general purpose power amplifier and switching applications... See More ⇒
..8. Size:160K inchange semiconductor
tip35 tip35a tip35b tip35c.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP35/35A/35B/35C DESCRIPTION With TO-3PN package Complement to type TIP36/36A/36B/36C DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base ... See More ⇒
..9. Size:219K inchange semiconductor
tip35c.pdf
isc Silicon NPN Power Transistor TIP35C DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP36C Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = 1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in gener... See More ⇒
0.1. Size:192K st
tip35cp tip36cp.pdf
TIP35CP TIP36CP Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN-PNP transistors Applications General purpose 3 Audio amplifier 2 1 TO-3P Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show excepti... See More ⇒
0.2. Size:190K st
tip35cw tip36cw.pdf
TIP35CW TIP36CW Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 3 2 Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show exc... See More ⇒
0.3. Size:440K kec
tip35ca.pdf
SEMICONDUCTOR TIP35CA TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B N FEATURES O K Recommended for 75W Audio Frequency DIM MILLIMETERS Amplifier Output Stage. _ A + 15.60 0.20 _ B 4.80 + 0.20 Complementary to TIP36CA. _ C 19.90 + 0.20 _ D 2.00 0.20 + Icmax 25A. _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 D _ G 3.50 +... See More ⇒
0.4. Size:1293K cn sps
tip35ct4tl.pdf
TIP35CT4TL Silicon NPN Power Transistor DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP36C Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = 1.0A T C APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =... See More ⇒
0.5. Size:225K inchange semiconductor
tip35cf.pdf
isc Silicon NPN Power Transistor TIP35CF DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP36CF Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = 1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in gen... See More ⇒
Detailed specifications: TIP34B, TIP34C, TIP34D, TIP34E, TIP34F, TIP35, TIP35A, TIP35B, 2N3773, TIP35D, TIP35E, TIP35F, TIP36, TIP36A, TIP36B, TIP36C, TIP36D
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