TIP36A
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TIP36A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 90
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 25
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3
MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta:
TO218
Búsqueda de reemplazo de transistor bipolar TIP36A
TIP36A
Datasheet (PDF)
..1. Size:260K onsemi
tip35a tip35b tip35c tip36a tip36b tip36c.pdf 
TIP35A, TIP35B, TIP35C(NPN); TIP36A, TIP36B,TIP36C (PNP)Complementary SiliconHigh-Power Transistorshttp://onsemi.comDesigned for general-purpose power amplifier and switchingapplications.25 AMPEREFeaturesCOMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTSICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain
..2. Size:141K inchange semiconductor
tip36 tip36a tip36b tip36c.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP36/36A/36B/36C DESCRIPTION With TO-3PN package Complement to type TIP35/35A/35B/35C DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base
..3. Size:221K inchange semiconductor
tip36a.pdf
isc Silicon PNP Power Transistor TIP36ADESCRIPTIONDC Current Gain-: h = 25(Min)@I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type TIP35ACurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = -1.0AT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in gen
0.1. Size:215K inchange semiconductor
tip36ab.pdf
isc Silicon PNP Power Transistor TIP36ABDESCRIPTIONDC Current Gain-: h = 25(Min)@I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)a
0.2. Size:225K inchange semiconductor
tip36af.pdf
isc Silicon PNP Power Transistor TIP36AFDESCRIPTIONDC Current Gain-: h = 25(Min)@I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)a
0.3. Size:216K inchange semiconductor
tip36at.pdf
isc Silicon PNP Power Transistor TIP36ATDESCRIPTIONDC Current Gain-: h = 25(Min)@I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)a
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
