TK20 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK20
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 30 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: X18

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TK20 Datasheet (PDF)

0.1. Size:917K st
stk20n75f3.pdf pdf_icon

STK20N75F3N-channel 75 V, 0.0065 , 20 A, PolarPAKSTripFET Power MOSFETFeaturesVDSS RDS(on) maxTypeSTK20N75F3 75 V

0.2. Size:236K toshiba
tk20s06k3l.pdf pdf_icon

TK20S06K3LMOSFETs Silicon N-channel MOS (U-MOS )TK20S06K3LTK20S06K3LTK20S06K3LTK20S06K3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 23 m (typ.) (VGS = 10 V)(2) Low leakage current:

0.3. Size:245K toshiba
tk20n60w.pdf pdf_icon

TK20N60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20N60WTK20N60WTK20N60WTK20N60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.13 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

0.4. Size:239K toshiba
tk20n60w5.pdf pdf_icon

TK20N60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK20N60W5TK20N60W5TK20N60W5TK20N60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.15 (typ.) by used to Super Junction Str

0.5. Size:273K toshiba
tk200f04n1l.pdf pdf_icon

TK200F04N1LMOSFETs Silicon N-channel MOS (U-MOS-H)TK200F04N1LTK200F04N1LTK200F04N1LTK200F04N1L1. Applications1. Applications1. Applications1. Applications Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.78 m (typ.) (VGS = 10 V)

0.6. Size:271K toshiba
tk20e60u.pdf pdf_icon

TK20E60UMOSFETs Silicon N-Channel MOS (DTMOS)TK20E60UTK20E60UTK20E60UTK20E60U1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.165 (typ.)(2) High forward transfer admittance: |Yfs| = 12 S (typ.)(3) Low leakage current: IDS

0.7. Size:234K toshiba
tk20a60w5.pdf pdf_icon

TK20A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK20A60W5TK20A60W5TK20A60W5TK20A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.15 (typ.) by used to Super Junction Str

0.8. Size:242K toshiba
tk20g60w.pdf pdf_icon

TK20G60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20G60WTK20G60WTK20G60WTK20G60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.13 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

0.9. Size:232K toshiba
tk20a25d.pdf pdf_icon

TK20A25DMOSFETs Silicon N-Channel MOS (-MOS)TK20A25DTK20A25DTK20A25DTK20A25D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 250 V)(3) Enhancement mode: Vth

0.10. Size:236K toshiba
tk20s04k3l.pdf pdf_icon

TK20S04K3LMOSFETs Silicon N-channel MOS (U-MOS )TK20S04K3LTK20S04K3LTK20S04K3LTK20S04K3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 11 m (typ.) (VGS = 10 V)(2) Low leakage current:

0.11. Size:191K toshiba
tk20x60u.pdf pdf_icon

TK20X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20X60U Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.175 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

0.12. Size:237K toshiba
tk20p04m1.pdf pdf_icon

TK20P04M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK20P04M1TK20P04M1TK20P04M1TK20P04M11. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 3.7 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 19 m

0.13. Size:228K toshiba
tk20h50c.pdf pdf_icon

TK20H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) TK20H50C Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0. 23 (typ.) High forward transfer admittance : |Yfs| = 14 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

0.14. Size:239K toshiba
tk20j60w5.pdf pdf_icon

TK20J60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK20J60W5TK20J60W5TK20J60W5TK20J60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.15 (typ.) by used to Super Junction Str

0.15. Size:273K toshiba
tk20a60u.pdf pdf_icon

TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20A60U Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

0.16. Size:243K toshiba
tk20a60w.pdf pdf_icon

TK20A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20A60WTK20A60WTK20A60WTK20A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.13 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

0.17. Size:249K toshiba
tk20e60w.pdf pdf_icon

TK20E60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20E60WTK20E60WTK20E60WTK20E60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.13 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

0.18. Size:205K toshiba
tk20a60t.pdf pdf_icon

TK20A60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20A60T Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute M

0.19. Size:242K toshiba
tk20j60w.pdf pdf_icon

TK20J60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20J60WTK20J60WTK20J60WTK20J60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.13 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

0.20. Size:152K toshiba
tk20j60t.pdf pdf_icon

TK20J60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20J60T Switching Regulator Applications Unit: mm3.20.2 15.9max. Low drain-source ON resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VD

0.21. Size:196K toshiba
tk20d60u.pdf pdf_icon

TK20D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20D60U Switching Regulator Applications Unit: mm10.0 0.3 A 9.5 0.2 0.60.1 Low drain-source ON-resistance: RDS (ON) = 0.165 (typ.) 3.65 0.2 High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement

0.22. Size:254K toshiba
tk20d60t.pdf pdf_icon

TK20D60T NMOS (DTMOS) TK20D60T : mm10.00.3 A 9.50.2 0.60.1 : RDS (ON) = 0.165 () 3.650.2 : Yfs = 12 S () : IDSS = 100A (

0.23. Size:239K toshiba
tk20v60w.pdf pdf_icon

TK20V60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20V60WTK20V60WTK20V60WTK20V60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.136 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

0.24. Size:241K toshiba
tk20c60w.pdf pdf_icon

TK20C60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20C60WTK20C60WTK20C60WTK20C60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.13 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

0.25. Size:193K toshiba
tk20j50d.pdf pdf_icon

TK20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK20J50D Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source ON-resistance: RDS (ON) = 0.22 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (V

0.26. Size:192K toshiba
tk20j60u.pdf pdf_icon

TK20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20J60U Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source ON-resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V

0.27. Size:219K toshiba
tk20a20d.pdf pdf_icon

TK20A20DMOSFETs Silicon N-Channel MOS (-MOS)TK20A20DTK20A20DTK20A20DTK20A20D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.07 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 200 V)(3) Enhancement mode: Vth =

0.28. Size:243K toshiba
tk20e60w5.pdf pdf_icon

TK20E60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK20E60W5TK20E60W5TK20E60W5TK20E60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.15 (typ.) by used to Super Junction Str

0.29. Size:270K toshiba
tk20v60w5.pdf pdf_icon

TK20V60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK20V60W5TK20V60W5TK20V60W5TK20V60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.156 (typ.)(3) Easy to control Gate switc

0.30. Size:162K ixys
ixtk200n10p.pdf pdf_icon

VDSS = 100 VIXTK 200N10PPolarHTTMID25 = 200 APower MOSFET RDS(on) 7.5 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXTK)VDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGS Continuous 20 VVGSM Transient 30 VGID25 TC = 25 C 200 AD(TAB)SID

0.31. Size:129K ixys
ixtk20n150 ixtx20n150.pdf pdf_icon

High Voltage PowerVDSS = 1500VIXTK20N150MOSFETs w/ ExtendedID25 = 20AIXTX20N150FBSOARDS(on)

0.32. Size:530K first silicon
ftk2012.pdf pdf_icon

SEMICONDUCTORFTK2012TECHNICAL DATAN-Channel MOSFET DFNWB22-6L-JID V(BR)DSS RDS(on)MAX m@ 4.5V111. DRAIN @ 13m 2.5V2. DRAIN Am@1.8V 121620V 3. GATE 4. SOURCE 22m@1.5V5. DRAIN 41m@1.2V6. DRAIN FEATURES APPLICATION TrenchFET Power MOSFET Load Switch for Portable Applications Small package DFNWB22-6L-J Equivalent Circui

0.33. Size:425K first silicon
ftk20n06d.pdf pdf_icon

SEMICONDUCTORFTK20N06DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION The FTK20N06D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2provide excellent RDS(ON) with low gate charge. B 5 60 0 2C 5 20 0 2It can be used in awide variety of applications. D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAX I 2 30 0

0.34. Size:818K first silicon
ftk2005dfn23.pdf pdf_icon

SEMICONDUCTORFTK2005DFN23TECHNICAL DATADFNWB2 3-6L-CDual N-Channel MOSFETID V(BR)DSS RDS(on)MAX 13 Vm@10 14 @4.5Vm 15.5m@3.8V8A20V.5V 19m@227m@1.8VDESCRIPTIONThe FTK2005DFN23 uses advanced trench technology to provide excellent RDS(ON) low gate charge.It is ESD protected. This device is suitable for use as a uni-directional or bi-direction

0.35. Size:883K jiejie micro
jmtk2007a.pdf pdf_icon

JMTK2007ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 20V, 50A Load SwitchRDS(ON)

0.36. Size:1119K jiejie micro
jmtk2006a.pdf pdf_icon

JMTK2006ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 20V, 60A Load SwitchRDS(ON)

0.37. Size:769K cn vbsemi
tk20s06k3l.pdf pdf_icon

TK20S06K3Lwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

0.38. Size:246K inchange semiconductor
tk20e60u.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK20E60UITK20E60UFEATURESLow drain-source on-resistance:RDS(on) 0.19.Enhancement mode:Vth =3.0 to 5.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

0.39. Size:253K inchange semiconductor
tk20a60w5.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK20A60W5, ITK20A60W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.15 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 3.0 to 4.5V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regula

0.40. Size:251K inchange semiconductor
tk20a25d.pdf pdf_icon

isc N-Channel MOSFET Transistor TK20A25DFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 100m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

0.41. Size:253K inchange semiconductor
tk20a60u.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK20A60U, ITK20A60UFEATURESLow drain-source on-resistance: RDS(ON) = 0.165 (typ.)Low leakage current: IDSS = 100A (max) (VDS = 600 V)Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONS

0.42. Size:253K inchange semiconductor
tk20a60w.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK20A60W, ITK20A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.155 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulat

0.43. Size:220K inchange semiconductor
tk20j50d.pdf pdf_icon

isc N-Channel MOSFET Transistor TK20J50DDESCRIPTIONDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching voltage regulatorsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE UNIT

0.44. Size:253K inchange semiconductor
tk20a20d.pdf pdf_icon

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK20A20DITK20A20DFEATURESLow drain-source on-resistance:RDS(ON) = 0.07 (typ.)Enhancement mode:Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

Otros transistores... TIX891 , TIX896 , TIXM107 , TIXM108 , TIXM13 , TIXP39 , TIXP40 , TK100 , D667 , TK200 , TK200A , TK201 , TK201A , TK202A , TK203A , TK20B , TK20C .