TK20 Datasheet. Equivalente

 0.1. Size:917K  st
 stk20n75f3.pdf

STK20N75F3 N-channel 75 V, 0.0065 , 20 A, PolarPAK STripFET Power MOSFET Features VDSS RDS(on) max Type STK20N75F3 75 V

 0.2. Size:236K  toshiba
 tk20s06k3l.pdf

TK20S06K3L MOSFETs Silicon N-channel MOS (U-MOS ) TK20S06K3L TK20S06K3L TK20S06K3L TK20S06K3L 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 23 m (typ.) (VGS = 10 V) (2) Low leakage current

 0.3. Size:245K  toshiba
 tk20n60w.pdf

TK20N60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20N60W TK20N60W TK20N60W TK20N60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.13 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

 0.4. Size:239K  toshiba
 tk20n60w5.pdf

TK20N60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK20N60W5 TK20N60W5 TK20N60W5 TK20N60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 110 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.15 (typ.) by used to Super Junction Str

 0.5. Size:273K  toshiba
 tk200f04n1l.pdf

TK200F04N1L MOSFETs Silicon N-channel MOS (U-MOS -H) TK200F04N1L TK200F04N1L TK200F04N1L TK200F04N1L 1. Applications 1. Applications 1. Applications 1. Applications Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.78 m (typ.) (VGS = 10 V)

 0.6. Size:271K  toshiba
 tk20e60u.pdf

TK20E60U MOSFETs Silicon N-Channel MOS (DTMOS ) TK20E60U TK20E60U TK20E60U TK20E60U 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.165 (typ.) (2) High forward transfer admittance Yfs = 12 S (typ.) (3) Low leakage current IDS

 0.7. Size:234K  toshiba
 tk20a60w5.pdf

TK20A60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK20A60W5 TK20A60W5 TK20A60W5 TK20A60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 110 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.15 (typ.) by used to Super Junction Str

 0.8. Size:242K  toshiba
 tk20g60w.pdf

TK20G60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20G60W TK20G60W TK20G60W TK20G60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.13 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

 0.9. Size:232K  toshiba
 tk20a25d.pdf

TK20A25D MOSFETs Silicon N-Channel MOS ( -MOS ) TK20A25D TK20A25D TK20A25D TK20A25D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.073 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 250 V) (3) Enhancement mode Vth

 0.10. Size:236K  toshiba
 tk20s04k3l.pdf

TK20S04K3L MOSFETs Silicon N-channel MOS (U-MOS ) TK20S04K3L TK20S04K3L TK20S04K3L TK20S04K3L 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 11 m (typ.) (VGS = 10 V) (2) Low leakage current

 0.11. Size:191K  toshiba
 tk20x60u.pdf

TK20X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK20X60U Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.175 (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

 0.12. Size:237K  toshiba
 tk20p04m1.pdf

TK20P04M1 MOSFETs Silicon N-Channel MOS (U-MOS -H) TK20P04M1 TK20P04M1 TK20P04M1 TK20P04M1 1. Applications 1. Applications 1. Applications 1. Applications DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Low gate charge QSW = 3.7 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 19 m

 0.13. Size:228K  toshiba
 tk20h50c.pdf

TK20H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS VI) TK20H50C Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0. 23 (typ.) High forward transfer admittance Yfs = 14 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

 0.14. Size:239K  toshiba
 tk20j60w5.pdf

TK20J60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK20J60W5 TK20J60W5 TK20J60W5 TK20J60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 110 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.15 (typ.) by used to Super Junction Str

 0.15. Size:273K  toshiba
 tk20a60u.pdf

TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20A60U Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.165 (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

 0.16. Size:243K  toshiba
 tk20a60w.pdf

TK20A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20A60W TK20A60W TK20A60W TK20A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.13 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

 0.17. Size:249K  toshiba
 tk20e60w.pdf

TK20E60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20E60W TK20E60W TK20E60W TK20E60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.13 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

 0.18. Size:205K  toshiba
 tk20a60t.pdf

TK20A60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20A60T Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.165 (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement-mode Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute M

 0.19. Size:242K  toshiba
 tk20j60w.pdf

TK20J60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20J60W TK20J60W TK20J60W TK20J60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.13 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

 0.20. Size:152K  toshiba
 tk20j60t.pdf

TK20J60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20J60T Switching Regulator Applications Unit mm 3.2 0.2 15.9max. Low drain-source ON resistance RDS (ON) = 0.165 (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode Vth = 3.0 to 5.0 V (VD

 0.21. Size:196K  toshiba
 tk20d60u.pdf

TK20D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK20D60U Switching Regulator Applications Unit mm 10.0 0.3 A 9.5 0.2 0.6 0.1 Low drain-source ON-resistance RDS (ON) = 0.165 (typ.) 3.65 0.2 High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement

 0.22. Size:254K  toshiba
 tk20d60t.pdf

 0.23. Size:239K  toshiba
 tk20v60w.pdf

TK20V60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20V60W TK20V60W TK20V60W TK20V60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.136 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

 0.24. Size:241K  toshiba
 tk20c60w.pdf

TK20C60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20C60W TK20C60W TK20C60W TK20C60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.13 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

 0.25. Size:193K  toshiba
 tk20j50d.pdf

TK20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) TK20J50D Switching Regulator Applications Unit mm 15.9 MAX. 3.2 0.2 Low drain-source ON-resistance RDS (ON) = 0.22 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (V

 0.26. Size:192K  toshiba
 tk20j60u.pdf

TK20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20J60U Switching Regulator Applications Unit mm 15.9 MAX. 3.2 0.2 Low drain-source ON-resistance RDS (ON) = 0.165 (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 3.0 to 5.0 V

 0.27. Size:219K  toshiba
 tk20a20d.pdf

TK20A20D MOSFETs Silicon N-Channel MOS ( -MOS ) TK20A20D TK20A20D TK20A20D TK20A20D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.07 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 200 V) (3) Enhancement mode Vth =

 0.28. Size:243K  toshiba
 tk20e60w5.pdf

TK20E60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK20E60W5 TK20E60W5 TK20E60W5 TK20E60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 110 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.15 (typ.) by used to Super Junction Str

 0.29. Size:270K  toshiba
 tk20v60w5.pdf

TK20V60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK20V60W5 TK20V60W5 TK20V60W5 TK20V60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 110 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.156 (typ.) (3) Easy to control Gate switc

 0.30. Size:162K  ixys
 ixtk200n10p.pdf

VDSS = 100 V IXTK 200N10P PolarHTTM ID25 = 200 A Power MOSFET RDS(on) 7.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C 200 A D (TAB) S ID

 0.31. Size:129K  ixys
 ixtk20n150 ixtx20n150.pdf

High Voltage Power VDSS = 1500V IXTK20N150 MOSFETs w/ Extended ID25 = 20A IXTX20N150 FBSOA RDS(on)

 0.32. Size:530K  first silicon
 ftk2012.pdf

SEMICONDUCTOR FTK2012 TECHNICAL DATA N-Channel MOSFET DFNWB2 2-6L-J ID V(BR)DSS RDS(on)MAX m @ 4.5V 11 1. DRAIN @ 13m 2.5V 2. DRAIN A m @1.8V 12 16 20V 3. GATE 4. SOURCE 22m @1.5V 5. DRAIN 41m @1.2V 6. DRAIN FEATURES APPLICATION TrenchFET Power MOSFET Load Switch for Portable Applications Small package DFNWB2 2-6L-J Equivalent Circui

 0.33. Size:425K  first silicon
 ftk20n06d.pdf

SEMICONDUCTOR FTK20N06D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION The FTK20N06D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2 provide excellent RDS(ON) with low gate charge. B 5 60 0 2 C 5 20 0 2 It can be used in awide variety of applications. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX I 2 30 0

 0.34. Size:818K  first silicon
 ftk2005dfn23.pdf

SEMICONDUCTOR FTK2005DFN23 TECHNICAL DATA DFNWB2 3-6L-C Dual N-Channel MOSFET ID V(BR)DSS RDS(on)MAX 13 V m @10 14 @4.5V m 15.5m @3.8V 8 A 20V .5V 19m @2 27m @1.8V DESCRIPTION The FTK2005DFN23 uses advanced trench technology to provide excellent RDS(ON) low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-direction

 0.35. Size:883K  jiejie micro
 jmtk2007a.pdf

JMTK2007A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 20V, 50A Load Switch RDS(ON)

 0.36. Size:1119K  jiejie micro
 jmtk2006a.pdf

JMTK2006A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 20V, 60A Load Switch RDS(ON)

 0.37. Size:769K  cn vbsemi
 tk20s06k3l.pdf

TK20S06K3L www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

 0.38. Size:246K  inchange semiconductor
 tk20e60u.pdf

 0.39. Size:253K  inchange semiconductor
 tk20a60w5.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK20A60W5, ITK20A60W5 FEATURES Low drain-source on-resistance RDS(ON) = 0.15 (typ.) Easy to control Gate switching Enhancement mode Vth = 3.0 to 4.5V (VDS = 10 V, ID=1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regula

 0.40. Size:251K  inchange semiconductor
 tk20a25d.pdf

isc N-Channel MOSFET Transistor TK20A25D FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R = 100m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 0.41. Size:253K  inchange semiconductor
 tk20a60u.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK20A60U, ITK20A60U FEATURES Low drain-source on-resistance RDS(ON) = 0.165 (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION S

 0.42. Size:253K  inchange semiconductor
 tk20a60w.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK20A60W, ITK20A60W FEATURES Low drain-source on-resistance RDS(ON) = 0.155 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7V (VDS = 10 V, ID=1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulat

 0.43. Size:220K  inchange semiconductor
 tk20j50d.pdf

isc N-Channel MOSFET Transistor TK20J50D DESCRIPTION Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching voltage regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE UNIT

 0.44. Size:253K  inchange semiconductor
 tk20a20d.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK20A20D ITK20A20D FEATURES Low drain-source on-resistance RDS(ON) = 0.07 (typ.) Enhancement mode Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS