TK20 - описание и поиск аналогов

STK20N75F3 N-channel 75 V, 0.0065 , 20 A, PolarPAK STripFET Power MOSFET Features VDSS RDS(on) max Type STK20N75F3 75 V

TK20S06K3L MOSFETs Silicon N-channel MOS (U-MOS ) TK20S06K3L TK20S06K3L TK20S06K3L TK20S06K3L 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 23 m (typ.) (VGS = 10 V) (2) Low leakage current

TK20N60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20N60W TK20N60W TK20N60W TK20N60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.13 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

TK20N60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK20N60W5 TK20N60W5 TK20N60W5 TK20N60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 110 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.15 (typ.) by used to Super Junction Str

TK200F04N1L MOSFETs Silicon N-channel MOS (U-MOS -H) TK200F04N1L TK200F04N1L TK200F04N1L TK200F04N1L 1. Applications 1. Applications 1. Applications 1. Applications Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.78 m (typ.) (VGS = 10 V)

TK20E60U MOSFETs Silicon N-Channel MOS (DTMOS ) TK20E60U TK20E60U TK20E60U TK20E60U 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.165 (typ.) (2) High forward transfer admittance Yfs = 12 S (typ.) (3) Low leakage current IDS

TK20A60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK20A60W5 TK20A60W5 TK20A60W5 TK20A60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 110 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.15 (typ.) by used to Super Junction Str

TK20G60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20G60W TK20G60W TK20G60W TK20G60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.13 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

TK20A25D MOSFETs Silicon N-Channel MOS ( -MOS ) TK20A25D TK20A25D TK20A25D TK20A25D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.073 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 250 V) (3) Enhancement mode Vth

TK20S04K3L MOSFETs Silicon N-channel MOS (U-MOS ) TK20S04K3L TK20S04K3L TK20S04K3L TK20S04K3L 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 11 m (typ.) (VGS = 10 V) (2) Low leakage current

TK20X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK20X60U Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.175 (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

TK20P04M1 MOSFETs Silicon N-Channel MOS (U-MOS -H) TK20P04M1 TK20P04M1 TK20P04M1 TK20P04M1 1. Applications 1. Applications 1. Applications 1. Applications DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Low gate charge QSW = 3.7 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 19 m

TK20H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS VI) TK20H50C Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0. 23 (typ.) High forward transfer admittance Yfs = 14 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

TK20J60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK20J60W5 TK20J60W5 TK20J60W5 TK20J60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 110 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.15 (typ.) by used to Super Junction Str

TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20A60U Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.165 (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

TK20A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20A60W TK20A60W TK20A60W TK20A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.13 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

TK20E60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20E60W TK20E60W TK20E60W TK20E60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.13 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

TK20A60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20A60T Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.165 (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement-mode Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute M

TK20J60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20J60W TK20J60W TK20J60W TK20J60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.13 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

TK20J60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20J60T Switching Regulator Applications Unit mm 3.2 0.2 15.9max. Low drain-source ON resistance RDS (ON) = 0.165 (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode Vth = 3.0 to 5.0 V (VD

TK20D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK20D60U Switching Regulator Applications Unit mm 10.0 0.3 A 9.5 0.2 0.6 0.1 Low drain-source ON-resistance RDS (ON) = 0.165 (typ.) 3.65 0.2 High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement

TK20V60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20V60W TK20V60W TK20V60W TK20V60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.136 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

TK20C60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20C60W TK20C60W TK20C60W TK20C60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.13 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

TK20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) TK20J50D Switching Regulator Applications Unit mm 15.9 MAX. 3.2 0.2 Low drain-source ON-resistance RDS (ON) = 0.22 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (V

TK20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20J60U Switching Regulator Applications Unit mm 15.9 MAX. 3.2 0.2 Low drain-source ON-resistance RDS (ON) = 0.165 (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 3.0 to 5.0 V

TK20A20D MOSFETs Silicon N-Channel MOS ( -MOS ) TK20A20D TK20A20D TK20A20D TK20A20D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.07 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 200 V) (3) Enhancement mode Vth =

TK20E60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK20E60W5 TK20E60W5 TK20E60W5 TK20E60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 110 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.15 (typ.) by used to Super Junction Str

TK20V60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK20V60W5 TK20V60W5 TK20V60W5 TK20V60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 110 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.156 (typ.) (3) Easy to control Gate switc

VDSS = 100 V IXTK 200N10P PolarHTTM ID25 = 200 A Power MOSFET RDS(on) 7.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C 200 A D (TAB) S ID

High Voltage Power VDSS = 1500V IXTK20N150 MOSFETs w/ Extended ID25 = 20A IXTX20N150 FBSOA RDS(on)

SEMICONDUCTOR FTK2012 TECHNICAL DATA N-Channel MOSFET DFNWB2 2-6L-J ID V(BR)DSS RDS(on)MAX m @ 4.5V 11 1. DRAIN @ 13m 2.5V 2. DRAIN A m @1.8V 12 16 20V 3. GATE 4. SOURCE 22m @1.5V 5. DRAIN 41m @1.2V 6. DRAIN FEATURES APPLICATION TrenchFET Power MOSFET Load Switch for Portable Applications Small package DFNWB2 2-6L-J Equivalent Circui

SEMICONDUCTOR FTK20N06D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION The FTK20N06D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2 provide excellent RDS(ON) with low gate charge. B 5 60 0 2 C 5 20 0 2 It can be used in awide variety of applications. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX I 2 30 0

SEMICONDUCTOR FTK2005DFN23 TECHNICAL DATA DFNWB2 3-6L-C Dual N-Channel MOSFET ID V(BR)DSS RDS(on)MAX 13 V m @10 14 @4.5V m 15.5m @3.8V 8 A 20V .5V 19m @2 27m @1.8V DESCRIPTION The FTK2005DFN23 uses advanced trench technology to provide excellent RDS(ON) low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-direction

JMTK2007A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 20V, 50A Load Switch RDS(ON)

JMTK2006A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 20V, 60A Load Switch RDS(ON)

TK20S06K3L www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK20A60W5, ITK20A60W5 FEATURES Low drain-source on-resistance RDS(ON) = 0.15 (typ.) Easy to control Gate switching Enhancement mode Vth = 3.0 to 4.5V (VDS = 10 V, ID=1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regula

isc N-Channel MOSFET Transistor TK20A25D FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R = 100m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK20A60U, ITK20A60U FEATURES Low drain-source on-resistance RDS(ON) = 0.165 (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION S

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK20A60W, ITK20A60W FEATURES Low drain-source on-resistance RDS(ON) = 0.155 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7V (VDS = 10 V, ID=1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulat

isc N-Channel MOSFET Transistor TK20J50D DESCRIPTION Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching voltage regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE UNIT

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK20A20D ITK20A20D FEATURES Low drain-source on-resistance RDS(ON) = 0.07 (typ.) Enhancement mode Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS