TK200 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK200F04N1L MOSFETs Silicon N-channel MOS (U-MOS -H) TK200F04N1L TK200F04N1L TK200F04N1L TK200F04N1L 1. Applications 1. Applications 1. Applications 1. Applications Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.78 m (typ.) (VGS = 10 V)

VDSS = 100 V IXTK 200N10P PolarHTTM ID25 = 200 A Power MOSFET RDS(on) 7.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C 200 A D (TAB) S ID

SEMICONDUCTOR FTK2005DFN23 TECHNICAL DATA DFNWB2 3-6L-C Dual N-Channel MOSFET ID V(BR)DSS RDS(on)MAX 13 V m @10 14 @4.5V m 15.5m @3.8V 8 A 20V .5V 19m @2 27m @1.8V DESCRIPTION The FTK2005DFN23 uses advanced trench technology to provide excellent RDS(ON) low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-direction

JMTK2007A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 20V, 50A Load Switch RDS(ON)

JMTK2006A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 20V, 60A Load Switch RDS(ON)