TK200 Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

TK200 Datasheet. Specs and Replacement

Type Designator: TK200 📄📄

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2.5 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 48 pF

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO3

TK200 Substitution

- BJT ⓘ Cross-Reference Search

TK200 datasheet

0.1. Size:273K toshiba

tk200f04n1l.pdf pdf_icon

TK200F04N1L MOSFETs Silicon N-channel MOS (U-MOS -H) TK200F04N1L TK200F04N1L TK200F04N1L TK200F04N1L 1. Applications 1. Applications 1. Applications 1. Applications Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.78 m (typ.) (VGS = 10 V) ... See More ⇒

0.2. Size:162K ixys

ixtk200n10p.pdf pdf_icon

VDSS = 100 V IXTK 200N10P PolarHTTM ID25 = 200 A Power MOSFET RDS(on) 7.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C 200 A D (TAB) S ID... See More ⇒

0.3. Size:818K first silicon

ftk2005dfn23.pdf pdf_icon

SEMICONDUCTOR FTK2005DFN23 TECHNICAL DATA DFNWB2 3-6L-C Dual N-Channel MOSFET ID V(BR)DSS RDS(on)MAX 13 V m @10 14 @4.5V m 15.5m @3.8V 8 A 20V .5V 19m @2 27m @1.8V DESCRIPTION The FTK2005DFN23 uses advanced trench technology to provide excellent RDS(ON) low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-direction... See More ⇒

0.4. Size:883K jiejie micro

jmtk2007a.pdf pdf_icon