TK21 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Advance Technical Information TrenchPTM VDSS = - 100V IXTK210P10T Power MOSFETs ID25 = - 210A IXTX210P10T RDS(on) 7.5m trr 200ns P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C -100 V D S VDGR TJ = 25 C to 150 C, RGS

IXTK 21N100 VDSS = 1000 V High Voltage IXTN 21N100 ID25 = 21 A MegaMOSTMFETs RDS(on) = 0.55 N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS TJ = 25 C to 150 C 1000 1000 V G D (TAB) D VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 1000 V S VGS Continuous 20 20 V miniBLOC, SOT-227 B VGSM Transient 30

KTK211 SEMICONDUCTOR N CHANNEL JUNCTION FIELD TECHNICAL DATA EFFECT TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. E L B L FEATURES DIM MILLIMETERS _ + A 2.93 0.20 Low Noise Figure NF=2.5dB(Typ.) (f=100MHz). B 1.30+0.20/-0.15 High Forward Transfer Admittance. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 yfs =9mS(Typ.) E 2.40+0.30/-0.20 1 G 1.90 Ext

SEMICONDUCTOR FTK2102 TECHNICAL DATA 20V N-Channel Enhancement-Mode MOSFET FEATURE 3 Leading Trench Technology for Low RDS(on) Extending Battery Life 2 1 SOT 323 APPLICATIONS High Side Load Switch Charging Circuit 3 Single Cell Battery Applications such as Cell Phones, Digital Cameras ,PDAs, etc 1 2 MARKING TS2 Maximum ratings (Ta=25 unless otherwise noted)

SEMICONDUCTOR FTK2101 TECHNICAL DATA 20V P-Channel Enhancement-Mode MOSFET FEATURE 3 Leading Trench Technology for Low RDS(on) Extending Battery Life 2 1 SOT 323 APPLICATIONS High Side Load Switch Charging Circuit 3 D Single Cell Battery Applications such as Cell Phones, Digital Cameras ,PDAs, etc G 1 S 2 MARKING TS1 Maximum ratings (Ta=25 unless otherwise n