TK21 - параметры, поиск аналогов, даташиты транзистора

TK21 Datasheet (PDF)

0.1. Size:179K ixys
ixtk210p10t ixtx210p10t.pdf pdf_icon

Advance Technical InformationTrenchPTM VDSS = - 100VIXTK210P10TPower MOSFETs ID25 = - 210AIXTX210P10T RDS(on) 7.5m trr 200nsP-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-264 (IXTK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C -100 V DSVDGR TJ = 25C to 150C, RGS

0.2. Size:137K ixys
ixtk21n100 ixtn21n100.pdf pdf_icon

IXTK 21N100 VDSS = 1000 VHigh VoltageIXTN 21N100 ID25 = 21 AMegaMOSTMFETsRDS(on) = 0.55 N-Channel, Enhancement ModeTO-264 AA (IXTK)Symbol Test Conditions Maximum RatingsIXTK IXTNVDSS TJ = 25C to 150C 1000 1000 VGD (TAB)DVDGR TJ = 25C to 150C; RGS = 1 M 1000 1000 VSVGS Continuous 20 20 VminiBLOC, SOT-227 BVGSM Transient 30

0.3. Size:379K kec
ktk211.pdf pdf_icon

KTK211SEMICONDUCTORN CHANNEL JUNCTION FIELDTECHNICAL DATAEFFECT TRANSISTORHIGH FREQUENCY APPLICATION.VHF BAND AMPLIFIER APPLICATION.EL B LFEATURESDIM MILLIMETERS_+A 2.93 0.20Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).B 1.30+0.20/-0.15High Forward Transfer Admittance. C 1.30 MAX23 D 0.40+0.15/-0.05: |yfs| =9mS(Typ.)E 2.40+0.30/-0.201G 1.90Ext

0.4. Size:144K first silicon
ftk2102.pdf pdf_icon

SEMICONDUCTORFTK2102TECHNICAL DATA20V N-Channel Enhancement-Mode MOSFET FEATURE 3Leading Trench Technology for Low RDS(on) Extending Battery Life 21SOT323APPLICATIONS High Side Load Switch Charging Circuit 3 Single Cell Battery Applications such as Cell Phones, Digital Cameras ,PDAs, etc 1 2 MARKING: TS2 Maximum ratings (Ta=25 unless otherwise noted)