TK25 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK25A20D MOSFETs Silicon N-Channel MOS ( -MOS ) TK25A20D TK25A20D TK25A20D TK25A20D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.047 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 200 V) (3) Enhancement mode Vth

TK25A60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK25A60X TK25A60X TK25A60X TK25A60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.105 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit

TK25E60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK25E60X TK25E60X TK25E60X TK25E60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.105 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit

TK25N60X5 MOSFETs Silicon N-Channel MOS (DTMOS -H) TK25N60X5 TK25N60X5 TK25N60X5 TK25N60X5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 120 ns(typ.) (2) Low drain-source on-resistance RDS(ON) = 0.12 (typ.) (3) Easy to control Gate switc

TK25A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK25A10K3 Swiching Regulator Applications Low drain-source ON resistance RDS (ON) = 31 m (typ.) Unit mm High forward transfer admittance Yfs = 50 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 100 V) Enhancement-model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu

TK25V60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK25V60X TK25V60X TK25V60X TK25V60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.11 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties with

TK25N60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK25N60X TK25N60X TK25N60X TK25N60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.105 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit

TK25A60X5 MOSFETs Silicon N-Channel MOS (DTMOS -H) TK25A60X5 TK25A60X5 TK25A60X5 TK25A60X5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 120 ns(typ.) (2) Low drain-source on-resistance RDS(ON) = 0.12 (typ.) (3) Easy to control Gate switc

TK25V60X5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK25V60X5 TK25V60X5 TK25V60X5 TK25V60X5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 120 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.125 (typ.) (3) Easy to control Gate switc

TK25E60X5 MOSFETs Silicon N-Channel MOS (DTMOS -H) TK25E60X5 TK25E60X5 TK25E60X5 TK25E60X5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 120 ns(typ.) (2) Low drain-source on-resistance RDS(ON) = 0.12 (typ.) (3) Easy to control Gate switc

TK25S06N1L MOSFETs Silicon N-channel MOS (U-MOS -H) TK25S06N1L TK25S06N1L TK25S06N1L TK25S06N1L 1. Applications 1. Applications 1. Applications 1. Applications Automotive Motor Drivers Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance RDS(ON) = 15 m (typ.) (VGS = 10 V) (3) L

IXTK 250N10 VDSS = 100 V High Current ID25 = 250 A MegaMOSTMFET RDS(on) = 5 m N-Channel Enhancement Mode Symbol Test conditions Maximum ratings TO-264 AA (IXTK) VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1.0 M 100 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) G ID25 TC = 25 C MOSFET chip capability 250 A D ID(RMS) Externa

LESHAN RADIO COMPANY, LTD. LNTK2575LT1G Small Signal MOSFET S-LNTK2575LT1G 25 V, 0.75 A, Single, N-Channel, ESD Protection, SOT-23 3 Features Advance Planar Technology for Fast Switching, Low RDS(on) 1 Higher Efficiency Extending Battery Life 2 This is a Pb-Free Device S- Prefix for Automotive and Other Applications Requiring SOT 23 Unique Site and Control Ch

SEMICONDUCTOR FTK25N03PDFN33 TECHNICAL DATA N-Channel Power MOSFET PDFN3.3 3.3-8L-A DESCRIPTION The FTK25N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Battery switch Good stability and uniformity with high EAS Load switch Excellent package for good he

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK25A20D ITK25A20D FEATURES Low drain-source on-resistance RDS(on) = 0.047 (typ.) Enhancement mode Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK25E60X ITK25E60X FEATURES Low drain-source on-resistance RDS(on) 0.125 . Enhancement mode Vth =2.5 to 3.5V (VDS = 10 V, ID=1.2mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK25A10K3 ITK25A10K3 FEATURES Low drain-source on-resistance RDS(ON) = 31m (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATIN

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK25A60X5, ITK25A60X5 FEATURES Low drain-source on-resistance RDS(ON) = 0.12 (typ.) Easy to control Gate switching Enhancement mode Vth = 3 to 4.5V (VDS = 10 V, ID=1.2mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regula

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK25E60X5 ITK25E60X5 FEATURES Low drain-source on-resistance RDS(on) 0.14 . Enhancement mode Vth =3.0 to 4.5V (VDS = 10 V, ID=1.2mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T