TK25 Datasheet, Equivalent, Cross Reference Search
Type Designator: TK25
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.25 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 6 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: X18
TK25 Transistor Equivalent Substitute - Cross-Reference Search
TK25 Datasheet (PDF)
tk25a20d.pdf
TK25A20DMOSFETs Silicon N-Channel MOS (-MOS)TK25A20DTK25A20DTK25A20DTK25A20D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.047 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 200 V)(3) Enhancement mode: Vth
tk25a60x.pdf
TK25A60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK25A60XTK25A60XTK25A60XTK25A60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.105 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit
tk25e60x.pdf
TK25E60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK25E60XTK25E60XTK25E60XTK25E60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.105 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit
tk25n60x5.pdf
TK25N60X5MOSFETs Silicon N-Channel MOS (DTMOS-H)TK25N60X5TK25N60X5TK25N60X5TK25N60X51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 120 ns(typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.12 (typ.)(3) Easy to control Gate switc
tk25a10k3.pdf
TK25A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK25A10K3 Swiching Regulator Applications Low drain-source ON resistance: RDS (ON) = 31 m (typ.) Unit: mm High forward transfer admittance: |Yfs| = 50 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 100 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu
tk25v60x.pdf
TK25V60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK25V60XTK25V60XTK25V60XTK25V60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.11 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties with
tk25n60x.pdf
TK25N60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK25N60XTK25N60XTK25N60XTK25N60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.105 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit
tk25a60x5.pdf
TK25A60X5MOSFETs Silicon N-Channel MOS (DTMOS-H)TK25A60X5TK25A60X5TK25A60X5TK25A60X51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 120 ns(typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.12 (typ.)(3) Easy to control Gate switc
tk25v60x5.pdf
TK25V60X5MOSFETs Silicon N-Channel MOS (DTMOS)TK25V60X5TK25V60X5TK25V60X5TK25V60X51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 120 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.125 (typ.)(3) Easy to control Gate switc
tk25e60x5.pdf
TK25E60X5MOSFETs Silicon N-Channel MOS (DTMOS-H)TK25E60X5TK25E60X5TK25E60X5TK25E60X51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 120 ns(typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.12 (typ.)(3) Easy to control Gate switc
tk25s06n1l.pdf
TK25S06N1LMOSFETs Silicon N-channel MOS (U-MOS-H)TK25S06N1LTK25S06N1LTK25S06N1LTK25S06N1L1. Applications1. Applications1. Applications1. Applications Automotive Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) AEC-Q101 qualified(2) Low drain-source on-resistance: RDS(ON) = 15 m (typ.) (VGS = 10 V)(3) L
ixtk250n10.pdf
IXTK 250N10 VDSS = 100 VHigh CurrentID25 = 250 AMegaMOSTMFETRDS(on) = 5 mN-Channel Enhancement ModeSymbol Test conditions Maximum ratingsTO-264 AA (IXTK)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1.0 M 100 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)GID25 TC = 25C MOSFET chip capability 250 ADID(RMS) Externa
lntk2575lt1g s-lntk2575lt1g.pdf
LESHAN RADIO COMPANY, LTD.LNTK2575LT1GSmall Signal MOSFETS-LNTK2575LT1G25 V, 0.75 A, Single, N-Channel,ESD Protection, SOT-233Features Advance Planar Technology for Fast Switching, Low RDS(on)1 Higher Efficiency Extending Battery Life2 This is a Pb-Free Device S- Prefix for Automotive and Other Applications Requiring SOT 23 Unique Site and Control Ch
ftk25n03pdfn33.pdf
SEMICONDUCTORFTK25N03PDFN33TECHNICAL DATAN-Channel Power MOSFET PDFN3.33.3-8L-A DESCRIPTION The FTK25N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Battery switch Good stability and uniformity with high EAS Load switch Excellent package for good he
tk25a20d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK25A20DITK25A20DFEATURESLow drain-source on-resistance:RDS(on) = 0.047 (typ.)Enhancement mode:Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING
tk25a60x.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK25A60X,ITK25A60XFEATURESLow drain-source on-resistance: RDS(ON) = 0.105 (typ.)High-speed switching properties with lower capacitance.Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=1.2mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION
tk25e60x.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK25E60XITK25E60XFEATURESLow drain-source on-resistance:RDS(on) 0.125.Enhancement mode:Vth =2.5 to 3.5V (VDS = 10 V, ID=1.2mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =
tk25a10k3.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK25A10K3ITK25A10K3FEATURESLow drain-source on-resistance:RDS(ON) = 31m (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATIN
tk25a60x5.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK25A60X5, ITK25A60X5FEATURESLow drain-source on-resistance: RDS(ON) = 0.12 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=1.2mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regula
tk25e60x5.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK25E60X5ITK25E60X5FEATURESLow drain-source on-resistance:RDS(on) 0.14.Enhancement mode:Vth =3.0 to 4.5V (VDS = 10 V, ID=1.2mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
