TK30 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STK30N2LLH5 N-channel 25 V, 0.0024 , 30 A, PolarPAK STripFET V Power MOSFET Preliminary Data Features RDS(on) VDSS RDS(on)*Qg Type max STK30N2LLH5 25 V

TK30J25D MOSFETs Silicon N-Channel MOS ( -MOS ) TK30J25D TK30J25D TK30J25D TK30J25D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.046 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 250 V) (3) Enhancement mode Vth

TK30A06N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK30A06N1 TK30A06N1 TK30A06N1 TK30A06N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 12.2 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 60 V) (3) Enha

TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TK30A06J3A Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 19 m (typ.) High forward transfer admittance Yfs = 34 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 60 V) Enhancement mode Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute M

TK30E06N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK30E06N1 TK30E06N1 TK30E06N1 TK30E06N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 12.2 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 60 V) (3) Enha

TK30S06K3L MOSFETs Silicon N-channel MOS (U-MOS ) TK30S06K3L TK30S06K3L TK30S06K3L TK30S06K3L 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 14 m (typ.) (VGS = 10 V) (2) Low leakage current

NTK3043N Power MOSFET 20 V, 285 mA, N-Channel with ESD Protection, SOT-723 Features http //onsemi.com Enables High Density PCB Manufacturing 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89 V(BR)DSS RDS(on) TYP ID Max Low Voltage Drive Makes this Device Ideal for Portable Equipment 1.5 W @ 4.5 V Low Threshold Levels, VGS(TH)

NTK3043N Power MOSFET 20 V, 285 mA, N-Channel with ESD Protection, SOT-723 Features http //onsemi.com Enables High Density PCB Manufacturing 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89 V(BR)DSS RDS(on) TYP ID Max Low Voltage Drive Makes this Device Ideal for Portable Equipment 1.5 W @ 4.5 V Low Threshold Levels, VGS(TH)

LESHAN RADIO COMPANY, LTD. Power MOSFET 20 V, 285 mA, P-Channel with ESD Protection, SOT-723 LNTK3043PT5G Features S-LNTK3043PT5G Enables High Density PCB Manufacturing 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89 V(BR)DSS RDS(on) TYP ID Max Low Voltage Drive Makes this Device Ideal for Portable Equipment 1.5 W @ 4.5 V Low Threshold Levels, VGS(TH)

SEMICONDUCTOR FTK3018 TECHNICAL DATA Silicon N-channel MOSFET 100mA, 30V Features 1) Low on-resistance. 3 2) Fast switching speed. 2 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 1 4) Easily designed drive circuits. 5) Easy to parallel. SOT 323 ESD>500V We declare that the material of product compliance with RoHS requirements. N

SEMICONDUCTOR FTK3004D TECHNICAL DATA DESCRIPTION The FTK3004D uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is D suitable for use as a load switch or in PWM applications. G GENERAL FEATURES S VDS = 30V,ID =55A Schematic diagram RDS(ON)

SEMICONDUCTOR FTK3051 TECHNICAL DATA Main Product Characteristics D 1 6 D D VDSS -30V 2 5 D D G RDS(on) 45mohm(typ.) 3 4 G S S ID -4A SOT23-6 Marking and pin Schematic diagram A ssignment Features and Benefits Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resista

SEMICONDUCTOR FTK3022 TECHNICAL DATA Feathers ID =60A Advanced trench process technology BV=100V Ultra low Rdson, typical 16mohm Rdson=22mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description The FTK3022 is a new generation of middle voltage and high current N Channel enhancement mode trench power FTK3022 TOP View (TO

30V, 80A, 6.3m N-channel Power Trench MOSFET JMTK3006D Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 30 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 80 A RDS(ON)_Typ(@VGS=10V 3.9 mW RDS(ON)_Typ(@VGS=4.5V 6.3 mW Applications Load Switch PWM Application Pow

JMTK3005A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications Load Switch 30V, 100A PWM Application RDS(ON)

JMTK3006B Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 70A Load Switch RDS(ON)

30V, 90A, 4.6m N-channel Power Trench MOSFET JMTK3005B Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 30 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 90 A RDS(ON)_Typ(@VGS=10V 2.9 mW RDS(ON)_Typ(@VGS=4.5V 4.6 mW Applications Load Switch PWM Application Pow

JMTK3002B Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 180A Load Switch RDS(ON)

30V, 62A, 6.1m N-channel Power Trench MOSFET JMTK3006C Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 30 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 62 A RDS(ON)_Typ(@VGS=10V 4.3 mW Applications RDS(ON)_Typ(@VGS=4.5V 6.1 mW Load Switch PWM Application Pow

JMTK3004A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 100A Load Switch RDS(ON)

30V, 61A,7.0m N-channel Power Trench MOSFET JMTK3006E Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 30 V 100% Vds Tested VGS(th)_Typ 1.4 V Halogen-free; RoHS-compliant ID(@VGS=10V) 61 A RDS(ON)_Typ(@VGS=10V 4.3 mW RDS(ON)_Typ(@VGS=4.5V 7.0 mW Applications Load Switch PWM Application Powe

JMTK3003A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 150A Load Switch RDS(ON)

30V, 94A, 6.0m N-channel Power Trench MOSFET JMTK3005C Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 30 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 94 A RDS(ON)_Typ(@VGS=10V 3.1 mW Applications RDS(ON)_Typ(@VGS=4.5V 6.0 mW Load Switch PWM Application Pow

JMTK3005L Description JMT N-channel MOSFET Features Application 30V, 90A Load Switch R

TK30A06J3 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; RoHS RDS(on) ( )VGS = 10 V 0.027 f = 60 Hz) COMPLIANT Qg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configuration Single

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK30A06N1 ITK30A06N1 FEATURES Low drain-source on-resistance RDS(ON) = 12.2m (typ.) (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.2mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUT

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK30E06N1 ITK30E06N1 FEATURES Low drain-source on-resistance RDS(on) 15.0m . (VGS = 10 V) Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=0.2mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MA