TK30 Datasheet and Replacement

STK30N2LLH5N-channel 25 V, 0.0024 , 30 A, PolarPAKSTripFETV Power MOSFETPreliminary DataFeaturesRDS(on) VDSS RDS(on)*QgTypemaxSTK30N2LLH5 25 V

TK30J25DMOSFETs Silicon N-Channel MOS (-MOS)TK30J25DTK30J25DTK30J25DTK30J25D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.046 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 250 V)(3) Enhancement mode: Vth

TK30A06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK30A06N1TK30A06N1TK30A06N1TK30A06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 12.2 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3) Enha

TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TK30A06J3A Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 19 m (typ.) High forward transfer admittance: |Yfs| = 34 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute M

TK30E06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK30E06N1TK30E06N1TK30E06N1TK30E06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 12.2 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3) Enha

TK30S06K3LMOSFETs Silicon N-channel MOS (U-MOS )TK30S06K3LTK30S06K3LTK30S06K3LTK30S06K3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 14 m (typ.) (VGS = 10 V)(2) Low leakage current:

NTK3043NPower MOSFET20 V, 285 mA, N-Channel with ESDProtection, SOT-723Featureshttp://onsemi.com Enables High Density PCB Manufacturing 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89V(BR)DSS RDS(on) TYP ID Max Low Voltage Drive Makes this Device Ideal for Portable Equipment1.5 W @ 4.5 V Low Threshold Levels, VGS(TH)

NTK3043NPower MOSFET20 V, 285 mA, N-Channel with ESDProtection, SOT-723Featureshttp://onsemi.com Enables High Density PCB Manufacturing 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89V(BR)DSS RDS(on) TYP ID Max Low Voltage Drive Makes this Device Ideal for Portable Equipment1.5 W @ 4.5 V Low Threshold Levels, VGS(TH)

LESHAN RADIO COMPANY, LTD.Power MOSFET20 V, 285 mA, P-Channel with ESDProtection, SOT-723LNTK3043PT5GFeaturesS-LNTK3043PT5G Enables High Density PCB Manufacturing 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89V(BR)DSS RDS(on) TYP ID Max Low Voltage Drive Makes this Device Ideal for Portable Equipment1.5 W @ 4.5 V Low Threshold Levels, VGS(TH)

SEMICONDUCTORFTK3018TECHNICAL DATASilicon N-channel MOSFET 100mA, 30V Features 1) Low on-resistance. 32) Fast switching speed. 23) Low voltage drive (2.5V) makes this device ideal for portable equipment.14) Easily designed drive circuits. 5) Easy to parallel. SOT323 ESD>500V We declare that the material of product compliance with RoHS requirements.N

SEMICONDUCTORFTK3004DTECHNICAL DATADESCRIPTION The FTK3004D uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is Dsuitable for use as a load switch or in PWM applications. GGENERAL FEATURES S VDS = 30V,ID =55A Schematic diagram RDS(ON)

SEMICONDUCTORFTK3051TECHNICAL DATAMain Product Characteristics: D1 6D DVDSS -30V 25DDG RDS(on) 45mohm(typ.) 34G SSID -4A SOT23-6 Marking and pin Schematic diagramA ssignment Features and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resista

SEMICONDUCTOR FTK3022 TECHNICAL DATAFeathers: ID =60A Advanced trench process technology BV=100V Ultra low Rdson, typical 16mohm Rdson=22mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The FTK3022 is a new generation of middle voltage and high current NChannel enhancement mode trench power FTK3022 TOP View (TO

TK30A06J3www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RoHSRDS(on) ()VGS = 10 V 0.027f = 60 Hz) COMPLIANTQg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 27 175 C Operating TemperatureQgd (nC) 46 Dynamic dV/dt RatingConfiguration Single

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK30A06N1ITK30A06N1FEATURESLow drain-source on-resistance:RDS(ON) = 12.2m (typ.) (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.2mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUT

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK30E06N1ITK30E06N1FEATURESLow drain-source on-resistance:RDS(on) 15.0m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=0.2mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MA