2N5306
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5306
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4
W
Tensión colector-base (Vcb): 25
V
Tensión colector-emisor (Vce): 25
V
Tensión emisor-base (Veb): 12
V
Corriente del colector DC máxima (Ic): 0.3
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 60
MHz
Capacitancia de salida (Cc): 10
pF
Ganancia de corriente contínua (hfe): 7000
Paquete / Cubierta: TO98-3
Búsqueda de reemplazo de transistor bipolar 2N5306
2N5306
Datasheet (PDF)
..1. Size:56K fairchild semi
2n5306.pdf 
2N5306NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Bas
9.1. Size:251K motorola
2n5301 2n5302 2n5303.pdf
Order this documentMOTOROLAby 2N5301/DSEMICONDUCTOR TECHNICAL DATA2N53012N5302High-Power NPN Silicon2N5303Transistors. . . for use in power amplifier and switching circuits applications.20 AND 30 AMPERE High CollectorEmitter Sustaining Voltage POWER TRANSISTORSVCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303)NPN SILICON Low CollectorEmitter Saturatio
9.2. Size:56K fairchild semi
2n5308.pdf
2N5308NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Bas
9.3. Size:57K fairchild semi
2n5307.pdf
2N5307NPN General Purpose Amplifier This device designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from Process 05. See MPSA14 for characteristics.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emit
9.4. Size:95K central
2n5303.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
9.5. Size:92K onsemi
2n5302.pdf
2N5302High-Power NPN SiliconTransistorHigh-power NPN silicon transistors are for use in power amplifierand switching circuits applications.Featureshttp://onsemi.com Low Collector-Emitter Saturation Voltage -VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc30 AMPERES Pb-Free Package is Available*POWER TRANSISTORNPN SILICONMAXIMUM RATINGS (Note 1) (TJ = 25C unless otherwis
9.6. Size:92K onsemi
2n5302g.pdf
2N5302High-Power NPN SiliconTransistorHigh-power NPN silicon transistors are for use in power amplifierand switching circuits applications.Featureshttp://onsemi.com Low Collector-Emitter Saturation Voltage -VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc30 AMPERES Pb-Free Package is Available*POWER TRANSISTORNPN SILICONMAXIMUM RATINGS (Note 1) (TJ = 25C unless otherwis
9.10. Size:167K cn sptech
2n5301.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N5301DESCRIPTIONLow Collector Saturation Voltage-: V = 0.75V(Max.)@ I = 10ACE(sat) CWide Area of Safe OperationComplement to Type 2N4398APPLICATIONSDesigned for use in power amplifier and switching circuitsapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba
9.11. Size:167K cn sptech
2n5302.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N5302DESCRIPTIONLow Collector Saturation Voltage-: V = 0.75V(Max.)@ I = 10ACE(sat) CWide Area of Safe OperationComplement to Type 2N4399APPLICATIONSDesigned for use in power amplifier and switching circuitsapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba
9.12. Size:38K inchange semiconductor
2n5301.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5301 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 0.75V(Max.)@ IC= 10A Wide Area of Safe Operation Complement to Type 2N4398 APPLICATIONS Designed for use in power amplifier and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALU
9.13. Size:196K inchange semiconductor
2n5302.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2N5302DESCRIPTIONLow Collector Saturation Voltage-: V = 0.75V(Max.)@ I = 10ACE(sat) CWide Area of Safe OperationComplement to Type 2N4399100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in power amplifier and switching cir
9.14. Size:119K inchange semiconductor
2n5301 2n5302 2n5303.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5301 2N5302 2N5303 DESCRIPTION With TO-3 package Complement to type 2N4398/4399/5745 Low collector/saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified o
Otros transistores... 2N5298
, 2N53
, 2N530
, 2N5301
, 2N5302
, 2N5303
, 2N5304
, 2N5305
, 2SA1943
, 2N5306A
, 2N5307
, 2N5308
, 2N5308A
, 2N5309
, 2N531
, 2N5310
, 2N5311
.
