2N5306 - описание и поиск аналогов

2N5306 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Bas

Order this document MOTOROLA by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 High-Power NPN Silicon 2N5303 Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE High Collector Emitter Sustaining Voltage POWER TRANSISTORS VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) NPN SILICON Low Collector Emitter Saturatio

2N5308 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Bas

2N5307 NPN General Purpose Amplifier This device designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from Process 05. See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emit

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2N5302 High-Power NPN Silicon Transistor High-power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http //onsemi.com Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc 30 AMPERES Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS (Note 1) (TJ = 25 C unless otherwis

2N5302 High-Power NPN Silicon Transistor High-power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http //onsemi.com Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc 30 AMPERES Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS (Note 1) (TJ = 25 C unless otherwis

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SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2N5301 DESCRIPTION Low Collector Saturation Voltage- V = 0.75V(Max.)@ I = 10A CE(sat) C Wide Area of Safe Operation Complement to Type 2N4398 APPLICATIONS Designed for use in power amplifier and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba

SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2N5302 DESCRIPTION Low Collector Saturation Voltage- V = 0.75V(Max.)@ I = 10A CE(sat) C Wide Area of Safe Operation Complement to Type 2N4399 APPLICATIONS Designed for use in power amplifier and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5301 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= 0.75V(Max.)@ IC= 10A Wide Area of Safe Operation Complement to Type 2N4398 APPLICATIONS Designed for use in power amplifier and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALU

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N5302 DESCRIPTION Low Collector Saturation Voltage- V = 0.75V(Max.)@ I = 10A CE(sat) C Wide Area of Safe Operation Complement to Type 2N4399 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in power amplifier and switching cir

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5301 2N5302 2N5303 DESCRIPTION With TO-3 package Complement to type 2N4398/4399/5745 Low collector/saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified o