TN2369 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TN2369
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 500 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar TN2369
TN2369 Datasheet (PDF)
ktn2369u au.pdf
SEMICONDUCTOR KTN2369U/AUTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH SPEED SWITCHING APPLICATION. EFEATURES M B MDIM MILLIMETERSHigh Frequency Characteristics._A+2.00 0.20D2_+B 1.25 0.15: fT=500MHz (Min.) (VCE=10V, f=100MHz, IC=10mA)._+C 0.90 0.1031Excellent Switching Characteristics. D 0.3+0.10/-0.05_E +2.10 0.20G 0.65H 0.15+0.1/
ktn2369 a.pdf
SEMICONDUCTOR KTN2369/ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH SPEED SWITCHING APPLICATION. B CFEATURESHigh Frequency Characteristics : fT=500MHz (Min.) (VCE=10V, f=100MHz, IC=10mA).Excellent Switching Characteristics.N DIM MILLIMETERSKTN2369/2369A Electrically Similar to 2N2369/2369A.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RA
ktn2369s as.pdf
SEMICONDUCTOR KTN2369S/ASTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH SPEED SWITCHING APPLICATION. EL B LFEATURESDIM MILLIMETERS_+2.93 0.20Excellent High Frequency Characteristics. AB 1.30+0.20/-0.15Excellent Switching Characteristics.C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10L 0.55P PM 0.2
btn2369n3.pdf
Spec. No. : C229N3 Issued Date : 2004.08.09 CYStech Electronics Corp.Revised Date : 2013.02.23 Page No. : 1/6 High Frequency NPN Switching Transistor BTN2369N3Description High transition frequency, f =500MHz(min) T High current, IC(max)=500mA Low saturation voltage, V =0.3V(max) CE(SAT) Pb-free lead plating and halogen-free package Symbol Outline BTN
btn2369s3.pdf
Spec. No. : C229S3 Issued Date : 2011.10.05 CYStech Electronics Corp.Revised Date : Page No. : 1/6 High Frequency NPN Switching Transistor BTN2369S3Description High transition frequency, f =500MHz(min) T High current, IC(max)=200mA Low saturation voltage, V =0.3V(max) CE(SAT) Pb-free lead plating package Symbol Outline BTN2369S3 SOT-323 BBase
btn2369a3.pdf
Spec. No. : C229A3 Issued Date : 2004.08.09 CYStech Electronics Corp. Revised Date : Page No. : 1/3 High Frequency NPN Switching Transistor BTN2369A3Description High transition frequency, f =500MHz(min) T High current, IC(max)=200mA Low saturation voltage, V =0.3V(max) CE(SAT)Symbol Outline BTN2369A3 TO-92 BBase CCollector EEmitter C B E
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
