TN3019 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TN3019 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.2 W
Tensión colector-base (Vcb): 140 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 80 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: TO237
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TN3019 datasheet
tn3019a.pdf
TN3019A TO-226 C B E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 1
mmftn3019e.pdf
MMFTN3019E N-Channel Field Effect Transistor Applications Interfacing, switching Features Drain Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Gate Drive circuits can be simple Parallel use is easy Source O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain-Source Vo
mmftn3019e-ms.pdf
www.msksemi.com MMFTN3019E-MS Semiconductor Compiance Absolute Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Value Units VDS Drain-Source Voltage 30 V VGS Continuous Gate-Source Voltage 20V V 3 I Continuous Drain Current 100 mA D P Power Dissipation 150 mW D 2 R JA Thermal Resistance from Junction to Ambient 833 C /W 1. Gate 2. Source TSTG Storage Te
Otros transistores... TN2907A, TN2907AR, TN2907R, TN2923, TN2924, TN2925, TN2926, TN3013, 2SA1943, TN3020, TN3053, TN3053A, TN3244, TN3245, TN3250, TN3250A, TN3251
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