TN3019 Datasheet, Equivalent, Cross Reference Search
Type Designator: TN3019
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO237
TN3019 Transistor Equivalent Substitute - Cross-Reference Search
TN3019 Datasheet (PDF)
tn3019a.pdf
TN3019ATO-226CBENPN General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 500 mA andcollector voltages up to 80 V. Sourced from Process 12.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VVCBO Collector-Base Voltage 1
mmftn3019e.pdf
MMFTN3019E N-Channel Field Effect Transistor Applications Interfacing, switching Features Drain Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Gate Drive circuits can be simple Parallel use is easy SourceOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain-Source Vo
mmftn3019e-ms.pdf
www.msksemi.comMMFTN3019E-MSSemiconductor CompianceAbsolute Maximum Ratings T = 25C unless otherwise notedASymbol Parameter Value UnitsVDS Drain-Source Voltage 30 VVGS Continuous Gate-Source Voltage 20V V3I Continuous Drain Current 100 mADP Power Dissipation 150 mWD2RJA Thermal Resistance from Junction to Ambient 833 C /W1. Gate2. SourceTSTG Storage Te
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
