TN3053 Todos los transistores

 

TN3053 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TN3053
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.2 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 80 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO237
 

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TN3053 Datasheet (PDF)

 9.1. Size:191K  utc
 utn3055.pdf pdf_icon

TN3053

UNISONIC TECHNOLOGIES CO., LTD UTN3055 Power MOSFET 12A, 25V N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UTN3055 is N-channel logic level enhancement mode field effect transistor. SYMBOL 2.Drain 1.Gate3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package PackingLead Free Halogen Free 1 2 3 UTN3055L-TN3-R UTN3055G-TN3-R TO-252 G D S Tape Reel

 9.2. Size:563K  cystek
 mtn3055j3.pdf pdf_icon

TN3053

Spec. No. : C390J3 Issued Date : 2007.06.12 CYStech Electronics Corp.Revised Date : 2009.02.04 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 30VID 15AMTN3055J3 RDSON 26m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic RoHS compliant package Symbol Outline TO-252 MTN3055J3GGate G D S D

 9.3. Size:349K  cystek
 mtn3055m3.pdf pdf_icon

TN3053

Spec. No. : C390M3 Issued Date : 2007.09.19 CYStech Electronics Corp.Revised Date : 2009.12.03 Page No. : 1/6 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VID 6AMTN3055M3 RDSON(MAX) 26m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free package Symbol Outline MTN3055M3 SOT-89 D G D S GGate S

 9.4. Size:290K  cystek
 mtn3055l3.pdf pdf_icon

TN3053

Spec. No. : C390L3 Issued Date : 2010.10.05 CYStech Electronics Corp. Revised Date : 2012.08.20 Page No. : 1/8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VMTN3055L3 ID 8.3A19m (typ) RDSON@VGS=10V, ID=4A 25m (typ) RDSON@VGS=4.5V, ID=3A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating p

MOSTRAR MÁS

Otros transistores... TN2907R , TN2923 , TN2924 , TN2925 , TN2926 , TN3013 , TN3019 , TN3020 , TIP3055 , TN3053A , TN3244 , TN3245 , TN3250 , TN3250A , TN3251 , TN3252 , TN3253 .

History: KSP05 | 2SC1729 | BUW12AF | UMC5NT1G | U2T451 | ASY54N | 40314S

 

 
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