TN3402 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TN3402  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.56 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 75

Encapsulados: TO92

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TN3402 datasheet

 9.1. Size:426K  cystek
 mtn3400n3.pdf pdf_icon

TN3402

Spec. No. C414N3 Issued Date 2007.07.05 CYStech Electronics Corp. Revised Date 2017.05.03 Page No. 1/ 9 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30V MTN3400N3 ID@VGS=10V, TA=25 C 5.8A 20m VGS=10V, ID=5.8A 22m RDSON(TYP) VGS=4.5V, ID=5A 27m VGS=2.5V, ID=4A Features Low on-resistance Low gate charge Excellent thermal and electrical

 9.2. Size:215K  semtech
 mmftn3406.pdf pdf_icon

TN3402

MMFTN3406 N-Channel Enhancement Mode Power MOSFET 1. Gate 2. Source 3. Drain TO-236 Plastic Package Drain Gate Source Absolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID 3.6 A Drain Current - Pulsed 1) IDM 15 A Power Dissipation 1) Pd 1.4 W Therm

 9.3. Size:368K  semtron
 stn3400a.pdf pdf_icon

TN3402

STN3400A 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN3400A is the N-Channel logic 30V/5.6A, RDS(ON) =28m (typ.)@VGS =10V enhancement mode power field effect transistor is 30V/5.0A, RDS(ON) =30m (typ.)@VGS =4.5V produced using high cell density. advanced trench 30V/3.2A, RDS(ON) =35m (typ.)@VGS =2.5V technology to provide excellent RDS

 9.4. Size:371K  semtron
 stn3404.pdf pdf_icon

TN3402

STN3404 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN3404 is the N-Channel logic enhancement 30V/6.0A, RDS(ON) =18m (typ.)@VGS =10V mode power field effect transistor is produced using 30V/4.8A, RDS(ON) =25m (typ.)@VGS =4.5V high cell density. advanced trench technology to provide excellent Super high density cell design for extremely l

MOSTRAR MÁS

Otros transistores... TN3391A, TN3392, TN3393, TN3394, TN3395, TN3396, TN3397, TN3398, S8550, TN3403, TN3404, TN3405, TN3414, TN3415, TN3416, TN3417, TN3444