TN3402 Datasheet, Equivalent, Cross Reference Search
Type Designator: TN3402
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.56 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: TO92
TN3402 Transistor Equivalent Substitute - Cross-Reference Search
TN3402 Datasheet (PDF)
mtn3400n3.pdf
Spec. No. : C414N3 Issued Date : 2007.07.05 CYStech Electronics Corp.Revised Date : 2017.05.03 Page No. : 1/ 9 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VMTN3400N3 ID@VGS=10V, TA=25C 5.8A 20m VGS=10V, ID=5.8A22m RDSON(TYP) VGS=4.5V, ID=5A 27m VGS=2.5V, ID=4A Features Low on-resistance Low gate charge Excellent thermal and electrical
mmftn3406.pdf
MMFTN3406 N-Channel Enhancement Mode Power MOSFET 1. Gate 2. Source 3. DrainTO-236 Plastic Package DrainGate SourceAbsolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value UnitDrain-Source Voltage VDSS 30 VGate-Source Voltage VGS 20 VContinuous Drain Current ID 3.6 ADrain Current - Pulsed 1) IDM 15 APower Dissipation 1) Pd 1.4 WTherm
stn3400a.pdf
STN3400A 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3400A is the N-Channel logic 30V/5.6A, RDS(ON) =28m(typ.)@VGS =10V enhancement mode power field effect transistor is 30V/5.0A, RDS(ON) =30m(typ.)@VGS =4.5V produced using high cell density. advanced trench 30V/3.2A, RDS(ON) =35m(typ.)@VGS =2.5V technology to provide excellent RDS
stn3404.pdf
STN3404 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3404 is the N-Channel logic enhancement 30V/6.0A, RDS(ON) =18m(typ.)@VGS =10V mode power field effect transistor is produced using 30V/4.8A, RDS(ON) =25m(typ.)@VGS =4.5V high cell density. advanced trench technology to provide excellent Super high density cell design for extremely l
stn3406.pdf
STN3406 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3406 is the N-Channel logic enhancement 30V/5.6A, RDS(ON) =23m(typ.)@VGS =10V mode power field effect transistor is produced using 30V/4.2A, RDS(ON) =35m(typ.)@VGS =4.5V high cell density. advanced trench technology to provide excellent Super high density cell design for extremely l
stn3400.pdf
STN3400 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3400 is the N-Channel logic enhancement 30V/5.8A, RDS(ON) =24m(typ.)@VGS =10V mode power field effect transistor is produced using 30V/5.0A, RDS(ON) =26m(typ.)@VGS =4.5V high cell density. advanced trench technology to 30V/3.5A, RDS(ON) =30m(typ.)@VGS =2.5V provide excellent RDS(
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
