TN3402 Datasheet. Specs and Replacement

Type Designator: TN3402  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.56 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 75

Noise Figure, dB: -

Package: TO92

 TN3402 Substitution

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TN3402 datasheet

 9.1. Size:426K  cystek

 mtn3400n3.pdf pdf_icon

TN3402

Spec. No. C414N3 Issued Date 2007.07.05 CYStech Electronics Corp. Revised Date 2017.05.03 Page No. 1/ 9 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30V MTN3400N3 ID@VGS=10V, TA=25 C 5.8A 20m VGS=10V, ID=5.8A 22m RDSON(TYP) VGS=4.5V, ID=5A 27m VGS=2.5V, ID=4A Features Low on-resistance Low gate charge Excellent thermal and electrical... See More ⇒

 9.2. Size:215K  semtech

 mmftn3406.pdf pdf_icon

TN3402

MMFTN3406 N-Channel Enhancement Mode Power MOSFET 1. Gate 2. Source 3. Drain TO-236 Plastic Package Drain Gate Source Absolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID 3.6 A Drain Current - Pulsed 1) IDM 15 A Power Dissipation 1) Pd 1.4 W Therm... See More ⇒

 9.3. Size:368K  semtron

 stn3400a.pdf pdf_icon

TN3402

STN3400A 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN3400A is the N-Channel logic 30V/5.6A, RDS(ON) =28m (typ.)@VGS =10V enhancement mode power field effect transistor is 30V/5.0A, RDS(ON) =30m (typ.)@VGS =4.5V produced using high cell density. advanced trench 30V/3.2A, RDS(ON) =35m (typ.)@VGS =2.5V technology to provide excellent RDS... See More ⇒

 9.4. Size:371K  semtron

 stn3404.pdf pdf_icon

TN3402

STN3404 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN3404 is the N-Channel logic enhancement 30V/6.0A, RDS(ON) =18m (typ.)@VGS =10V mode power field effect transistor is produced using 30V/4.8A, RDS(ON) =25m (typ.)@VGS =4.5V high cell density. advanced trench technology to provide excellent Super high density cell design for extremely l... See More ⇒

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Detailed specifications: TN3391A, TN3392, TN3393, TN3394, TN3395, TN3396, TN3397, TN3398, S8550, TN3403, TN3404, TN3405, TN3414, TN3415, TN3416, TN3417, TN3444

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