TN5550 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TN5550  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 160 V

Tensión colector-emisor (Vce): 140 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 10 pF

Ganancia de corriente contínua (hFE): 60

Encapsulados: TO92

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TN5550 datasheet

 9.1. Size:212K  diodes
 zxtn5551fl.pdf pdf_icon

TN5550

ZXTN5551FL 160V, SOT23, NPN High voltage transistor Summary BVCEO > 160V BVEBO > 6V IC(cont) = 600mA PD = 330mW Complementary part number ZXTP5401FL Description C A high voltage NPN transistor in a small outline surface mount package. Features B 160V rating SOT23 package E Applications E High voltage amplification C Ordering information Device Reel size Tape w

 9.2. Size:704K  diodes
 zxtn5551z.pdf pdf_icon

TN5550

NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE DXT5551 ZXTN5551Z 160V, SOT89, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC(cont) = 600mA PD = 1.2W Complementary part number ZXTP5401Z Description C A high voltage NPN transistor in a small outline surface mount package Features B 160V rating SOT89 package E Applications E High voltage amplificatio

 9.3. Size:204K  diodes
 zxtn5551g.pdf pdf_icon

TN5550

NOT RECOMMENDED FOR NEW DESIGN A Product Line of USE DZT5551 Diodes Incorporated ZXTN5551G 160V NPN VOLTAGE TRANSISTOR Features Mechanical Data BVCEO > 160V Case SOT223 Case material Molded Plastic. Green Molding Compound. BVEBO > 6V UL Flammability Rating 94V-0 IC = 600mA Continuous Collector Current Moisture Sensitivity Level 1 per J-STD-020

 9.4. Size:257K  cystek
 btn5551a3.pdf pdf_icon

TN5550

Spec. No. C208A3 Issued Date 2003.06.06 CYStech Electronics Corp. Revised Date 2012.10.02 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BTN5551A3 Description The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BT

MOSTRAR MÁS

Otros transistores... TN5143, TN5172, TN5179, TN5400R, TN5401, TN5401R, TN5447, TN5449, 2SB817, TN5550R, TN5551, TN5551R, TN5816, TN5855, TN5856, TN5857, TN5858