TN5551R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ZXTN5551FL 160V, SOT23, NPN High voltage transistor Summary BVCEO > 160V BVEBO > 6V IC(cont) = 600mA PD = 330mW Complementary part number ZXTP5401FL Description C A high voltage NPN transistor in a small outline surface mount package. Features B 160V rating SOT23 package E Applications E High voltage amplification C Ordering information Device Reel size Tape w

NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE DXT5551 ZXTN5551Z 160V, SOT89, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC(cont) = 600mA PD = 1.2W Complementary part number ZXTP5401Z Description C A high voltage NPN transistor in a small outline surface mount package Features B 160V rating SOT89 package E Applications E High voltage amplificatio

NOT RECOMMENDED FOR NEW DESIGN A Product Line of USE DZT5551 Diodes Incorporated ZXTN5551G 160V NPN VOLTAGE TRANSISTOR Features Mechanical Data BVCEO > 160V Case SOT223 Case material Molded Plastic. Green Molding Compound. BVEBO > 6V UL Flammability Rating 94V-0 IC = 600mA Continuous Collector Current Moisture Sensitivity Level 1 per J-STD-020

Spec. No. C208A3 Issued Date 2003.06.06 CYStech Electronics Corp. Revised Date 2012.10.02 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BTN5551A3 Description The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BT

Spec. No. C208K3 Issued Date 2012.06.28 CYStech Electronics Corp. Revised Date 2012.10.02 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTN5551K3 Features High breakdown voltage, BV 160V CEO Pb-free lead plating package Symbol Outline BTN5551K3 TO-92L B Base C Collector E Emitter Absolute Maximum Ratings (Ta=25 C) Paramete