TN5551R Datasheet. Specs and Replacement

Type Designator: TN5551R  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO92

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TN5551R datasheet

 8.1. Size:212K  diodes

 zxtn5551fl.pdf pdf_icon

TN5551R

ZXTN5551FL 160V, SOT23, NPN High voltage transistor Summary BVCEO > 160V BVEBO > 6V IC(cont) = 600mA PD = 330mW Complementary part number ZXTP5401FL Description C A high voltage NPN transistor in a small outline surface mount package. Features B 160V rating SOT23 package E Applications E High voltage amplification C Ordering information Device Reel size Tape w... See More ⇒

 8.2. Size:704K  diodes

 zxtn5551z.pdf pdf_icon

TN5551R

NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE DXT5551 ZXTN5551Z 160V, SOT89, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC(cont) = 600mA PD = 1.2W Complementary part number ZXTP5401Z Description C A high voltage NPN transistor in a small outline surface mount package Features B 160V rating SOT89 package E Applications E High voltage amplificatio... See More ⇒

 8.3. Size:204K  diodes

 zxtn5551g.pdf pdf_icon

TN5551R

NOT RECOMMENDED FOR NEW DESIGN A Product Line of USE DZT5551 Diodes Incorporated ZXTN5551G 160V NPN VOLTAGE TRANSISTOR Features Mechanical Data BVCEO > 160V Case SOT223 Case material Molded Plastic. Green Molding Compound. BVEBO > 6V UL Flammability Rating 94V-0 IC = 600mA Continuous Collector Current Moisture Sensitivity Level 1 per J-STD-020... See More ⇒

 8.4. Size:257K  cystek

 btn5551a3.pdf pdf_icon

TN5551R

Spec. No. C208A3 Issued Date 2003.06.06 CYStech Electronics Corp. Revised Date 2012.10.02 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BTN5551A3 Description The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BT... See More ⇒

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Detailed specifications: TN5400R, TN5401, TN5401R, TN5447, TN5449, TN5550, TN5550R, TN5551, D880, TN5816, TN5855, TN5856, TN5857, TN5858, TN5910, TN6076, TN706

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