TP3403 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TP3403  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.56 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 180

Encapsulados: TO92

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TP3403 datasheet

 0.1. Size:340K  cystek
 mtp3403n3.pdf pdf_icon

TP3403

Spec. No. C422N3 Issued Date 2007.10.16 CYStech Electronics Corp. Revised Date 2013.10.24 Page No. 1/8 P-CHANNEL Enhancement Mode MOSFET BVDSS -30V MTP3403N3 ID -3.7A RDSON@VGS=-10V, ID=-3A 52m (typ) RDSON@VGS=-4.5V,ID=-2.6A 76m (typ) Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technology High densit

 0.2. Size:392K  cystek
 mtp3403an3.pdf pdf_icon

TP3403

Spec. No. C387N3 Issued Date 2007.06.13 CYStech Electronics Corp. Revised Date 2011.11.29 Page No. 1/7 P-CHANNEL Enhancement Mode MOSFET MTP3403AN3 Features V =-30V DS @V =-4.5V, I =-2A R =85m GS DS DS(ON) @V =-2.5V, I =-1A R =120m GS DS DS(ON) Advanced trench process technology High density cell design for ultra low on resistance Low

 0.3. Size:300K  cystek
 mtp3403kn3.pdf pdf_icon

TP3403

Spec. No. C865N3 Issued Date 2012.08.08 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Enhancement Mode MOSFET BVDSS -30V MTP3403KN3 ID -3.3A RDS(ON)@VGS=-10V, ID=-2.5A 63m (typ) RDS(ON)@VGS=-4.5V, ID=-1.35A 100m (typ) RDS(ON)@VGS=-4V, ID=-1.35A 114m (typ) Features Advanced trench process technology High density cell design for ultra low

MOSTRAR MÁS

Otros transistores... TP3392, TP3393, TP3394, TP3395, TP3396, TP3397, TP3398, TP3402, 2SC2625, TP3404, TP3405, TP3414, TP3415, TP3416, TP3417, TP3563, TP3564