TP3403 Datasheet. Specs and Replacement
Type Designator: TP3403 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.56 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 180
Package: TO92
TP3403 Substitution
- BJT ⓘ Cross-Reference Search
TP3403 datasheet
Spec. No. C422N3 Issued Date 2007.10.16 CYStech Electronics Corp. Revised Date 2013.10.24 Page No. 1/8 P-CHANNEL Enhancement Mode MOSFET BVDSS -30V MTP3403N3 ID -3.7A RDSON@VGS=-10V, ID=-3A 52m (typ) RDSON@VGS=-4.5V,ID=-2.6A 76m (typ) Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technology High densit... See More ⇒
Spec. No. C387N3 Issued Date 2007.06.13 CYStech Electronics Corp. Revised Date 2011.11.29 Page No. 1/7 P-CHANNEL Enhancement Mode MOSFET MTP3403AN3 Features V =-30V DS @V =-4.5V, I =-2A R =85m GS DS DS(ON) @V =-2.5V, I =-1A R =120m GS DS DS(ON) Advanced trench process technology High density cell design for ultra low on resistance Low ... See More ⇒
Spec. No. C865N3 Issued Date 2012.08.08 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Enhancement Mode MOSFET BVDSS -30V MTP3403KN3 ID -3.3A RDS(ON)@VGS=-10V, ID=-2.5A 63m (typ) RDS(ON)@VGS=-4.5V, ID=-1.35A 100m (typ) RDS(ON)@VGS=-4V, ID=-1.35A 114m (typ) Features Advanced trench process technology High density cell design for ultra low... See More ⇒
Detailed specifications: TP3392, TP3393, TP3394, TP3395, TP3396, TP3397, TP3398, TP3402, 2SC2625, TP3404, TP3405, TP3414, TP3415, TP3416, TP3417, TP3563, TP3564
Keywords - TP3403 pdf specs
TP3403 cross reference
TP3403 equivalent finder
TP3403 pdf lookup
TP3403 substitution
TP3403 replacement
