TP3405
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TP3405
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.56
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 180
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar TP3405
TP3405
Datasheet (PDF)
9.1. Size:340K cystek
mtp3403n3.pdf 
Spec. No. : C422N3 Issued Date : 2007.10.16 CYStech Electronics Corp.Revised Date : 2013.10.24 Page No. : 1/8 P-CHANNEL Enhancement Mode MOSFET BVDSS -30VMTP3403N3 ID -3.7ARDSON@VGS=-10V, ID=-3A 52m(typ)RDSON@VGS=-4.5V,ID=-2.6A 76m(typ)Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technology High densit
9.2. Size:392K cystek
mtp3403an3.pdf
Spec. No. : C387N3 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date : 2011.11.29 Page No. : 1/7 P-CHANNEL Enhancement Mode MOSFET MTP3403AN3 Features V =-30V DS@V =-4.5V, I =-2A R =85m GS DSDS(ON)@V =-2.5V, I =-1A R =120m GS DSDS(ON) Advanced trench process technology High density cell design for ultra low on resistance Low
9.3. Size:300K cystek
mtp3403kn3.pdf
Spec. No. : C865N3 Issued Date : 2012.08.08 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-Channel Enhancement Mode MOSFET BVDSS -30VMTP3403KN3 ID -3.3ARDS(ON)@VGS=-10V, ID=-2.5A 63m(typ) RDS(ON)@VGS=-4.5V, ID=-1.35A 100m(typ)RDS(ON)@VGS=-4V, ID=-1.35A 114m(typ)Features Advanced trench process technology High density cell design for ultra low
9.4. Size:421K cystek
mtp3401n3.pdf
Spec. No. : C388N3 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date :2017.06.19 Page No. : 1/9 P-CHANNEL Enhancement Mode MOSFET BVDSS -30VMTP3401N3 ID@VGS=-10V, TA=25C -4.2A RDS(ON)@VGS=-10V, ID=-4.2A 46m(typ)RDS(ON)@VGS=-4.5V, ID=-4A 51m(typ)RDS(ON)@VGS=-2.5V, ID=-1A 59m(typ)Features Advanced trench process technology High density c
9.5. Size:428K semtech
mmftp3401.pdf
MMFTP3401 P-Channel Enhancement Mode MOSFET 1. Gate 2. Source 3. DrainTO-236 Plastic PackageAbsolute Maximum Ratings Parameter Symbol Value UnitDrain-Source Voltage -VDS 30 VGate-Source Voltage VGS 12 VDrain Current T = 25 4 A-ID A 3.2 T = 70 APeak Drain Current 1) -IDM 27 APower Dissipation 2) T = 25A1.4 PD W 0.9 T = 70AJunction and St
9.6. Size:364K semtron
stp3407.pdf
STP3407 -30V P-Channel Enhancement Mode MOSFETDESCRIPTION FEATUREThe STP3407 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =38m(typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.0A, RDS(ON) =58m(typ.)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON). Super high density cell desig
9.7. Size:372K semtron
stp3401a.pdf
STP3401A -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STP3401A is the P-Channel logic -30V/-4.3A, RDS(ON) =50m(typ.)@VGS =-10V enhancement mode power field effect transistor is -30V/-3.5A, RDS(ON) =58m(typ.)@VGS =-4.5V produced using high cell density. advanced trench -30V/-2.5A, RDS(ON) =73m(typ.)@VGS =-2.5V technology to provide exc
9.8. Size:372K semtron
stp3401.pdf
STP3401 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STP3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m(typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m(typ.)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m(typ.)@VGS =-2.5V provide exce
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