TP3405 - Даташиты. Аналоги. Основные параметры

Spec. No. C422N3 Issued Date 2007.10.16 CYStech Electronics Corp. Revised Date 2013.10.24 Page No. 1/8 P-CHANNEL Enhancement Mode MOSFET BVDSS -30V MTP3403N3 ID -3.7A RDSON@VGS=-10V, ID=-3A 52m (typ) RDSON@VGS=-4.5V,ID=-2.6A 76m (typ) Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technology High densit

Spec. No. C387N3 Issued Date 2007.06.13 CYStech Electronics Corp. Revised Date 2011.11.29 Page No. 1/7 P-CHANNEL Enhancement Mode MOSFET MTP3403AN3 Features V =-30V DS @V =-4.5V, I =-2A R =85m GS DS DS(ON) @V =-2.5V, I =-1A R =120m GS DS DS(ON) Advanced trench process technology High density cell design for ultra low on resistance Low

Spec. No. C865N3 Issued Date 2012.08.08 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Enhancement Mode MOSFET BVDSS -30V MTP3403KN3 ID -3.3A RDS(ON)@VGS=-10V, ID=-2.5A 63m (typ) RDS(ON)@VGS=-4.5V, ID=-1.35A 100m (typ) RDS(ON)@VGS=-4V, ID=-1.35A 114m (typ) Features Advanced trench process technology High density cell design for ultra low

Spec. No. C388N3 Issued Date 2007.06.13 CYStech Electronics Corp. Revised Date 2017.06.19 Page No. 1/9 P-CHANNEL Enhancement Mode MOSFET BVDSS -30V MTP3401N3 ID@VGS=-10V, TA=25 C -4.2A RDS(ON)@VGS=-10V, ID=-4.2A 46m (typ) RDS(ON)@VGS=-4.5V, ID=-4A 51m (typ) RDS(ON)@VGS=-2.5V, ID=-1A 59m (typ) Features Advanced trench process technology High density c

MMFTP3401 P-Channel Enhancement Mode MOSFET 1. Gate 2. Source 3. Drain TO-236 Plastic Package Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage -VDS 30 V Gate-Source Voltage VGS 12 V Drain Current T = 25 4 A -ID A 3.2 T = 70 A Peak Drain Current 1) -IDM 27 A Power Dissipation 2) T = 25 A 1.4 PD W 0.9 T = 70 A Junction and St

STP3407 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STP3407 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =38m (typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.0A, RDS(ON) =58m (typ.)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON). Super high density cell desig

STP3401A -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STP3401A is the P-Channel logic -30V/-4.3A, RDS(ON) =50m (typ.)@VGS =-10V enhancement mode power field effect transistor is -30V/-3.5A, RDS(ON) =58m (typ.)@VGS =-4.5V produced using high cell density. advanced trench -30V/-2.5A, RDS(ON) =73m (typ.)@VGS =-2.5V technology to provide exc

STP3401 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STP3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m (typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m (typ.)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m (typ.)@VGS =-2.5V provide exce

JMTP340P03A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -7A Load Switch RDS(ON)