2N5321R Todos los transistores

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2N5321R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5321R

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 10 W

Tensión colector-base (Vcb): 75 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 50 MHz

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hfe): 33

Empaquetado / Estuche: TO5

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2N5321R Datasheet (PDF)

4.1. 2n5320 2n5321.pdf Size:67K _st

2N5321R
2N5321R

2N5320 2N5321 SMALL SIGNAL NPN TRANSISTORS SILICON EPITAXIAL PLANAR NPN TRANSISTORS MEDIUM POWER AMPLIFIER PNP COMPLEMENTS ARE 2N5322 AND 2N5323 DESCRIPTION The 2N5320 and 2N5321 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power application in industrial and commercial equipments. TO-39 The compleme

4.2. 2n5320 2n5321 2n5322 2n5323.pdf Size:110K _central

2N5321R
2N5321R

DATA SHEET 2N5320 2N5321 NPN 2N5322 2N5323 PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5320 Series types are Complementary Silicon Power Transistors manufactured by the Epitaxial Planar Process, mounted in a hermetically sealed metal case, designed for amplifier and switching applications. MAXIMUM RATINGS (TC=25C unle

5.1. 2n5320x.pdf Size:59K _upd

2N5321R
2N5321R

2N5320X SMALL SIGNAL SILICON NPN MECHANICAL DATA Dimensions in mm (inches) TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) FEATURES 6.60 (0.260) • SILICON NPN TRANSISTOR 0.89 (0.035)max. • METAL CASE (JEDEC TO-39) 12.70 (0.500) 0.41 (0.016) min. 0.53 (0.021) • HIGH SPEED SATURATED SWITCHING dia. 5.08 (0.200) typ. 2.54 2 (0.100)

5.2. 2n5320.pdf Size:44K _st

2N5321R
2N5321R

2N5320 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N5320 is a silicon Epitaxial Planar NPN transistor in Jedec TO-39 metal case. It is especially intended for high-voltage medium power application in industrial and commercial equipments. The complementary PNP type is the 2N5322 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Ba

5.3. 2n5322.pdf Size:44K _st

2N5321R
2N5321R

2N5322 SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The 2N5322 is a silicon Epitaxial Planar PNP transistor in Jedec TO-39 metal case. It is especially intended for high-voltage medium power application in industrial and commercial equipments. The complementary NPN type is 2N5320. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base

5.4. 2n5322 2n5323.pdf Size:67K _st

2N5321R
2N5321R

2N5322 2N5323 SMALL SIGNAL PNP TRANSISTORS SILICON EPITAXIAL PLANAR PNP TRANSISTORS MEDIUM POWER AMPLIFIER NPN COMPLEMENTS ARE 2N5320 AND 2N5321 DESCRIPTION The 2N5322 and 2N5323 are silicon epitaxial planar PNP transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power application in industrial and commercial equipments. TO-39 The compleme

5.5. 2n5320 21 22 23.pdf Size:188K _cdil

2N5321R
2N5321R

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON POWER SWITCHING TRANSISTORS 2N5320, 2N5321 NPN 2N5322, 2N5323 PNP TO-39 Metal Can Package Medium Power Amplifier and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5320 2N5321 2N5322 2N5323 UNITS VCEO Collector Emitter Voltage 75 50 75 50 V VCBO Collector Base Voltag

Otros transistores... 2N5320V , 2N5320W , 2N5320Y , 2N5321 , 2N5321BL , 2N5321BR , 2N5321GN , 2N5321O , BC147 , 2N5321V , 2N5321W , 2N5321Y , 2N5322 , 2N5322BL , 2N5322BR , 2N5322GN , 2N5322O .

 


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