Справочник транзисторов. 2N5321R

 

Биполярный транзистор 2N5321R - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N5321R
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 10 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 75 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Предельная температура PN-перехода (Tj): 200 °C
   Граничная частота коэффициента передачи тока (ft): 50 MHz
   Ёмкость коллекторного перехода (Cc): 20 pf
   Статический коэффициент передачи тока (hfe): 33
   Корпус транзистора: TO5

 Аналоги (замена) для 2N5321R

 

 

2N5321R Datasheet (PDF)

 8.1. Size:67K  st
2n5320 2n5321.pdf

2N5321R
2N5321R

2N53202N5321SMALL SIGNAL NPN TRANSISTORS SILICON EPITAXIAL PLANAR NPNTRANSISTORS MEDIUM POWER AMPLIFIER PNP COMPLEMENTS ARE 2N5322 AND2N5323DESCRIPTION The 2N5320 and 2N5321 are silicon epitaxialplanar NPN transistors in Jedec TO-39 metalcase. They are especially intended forhigh-voltage medium power application inindustrial and commercial equipments.TO-39The compl

 8.2. Size:110K  central
2n5320 2n5321 2n5322 2n5323.pdf

2N5321R
2N5321R

DATA SHEET2N5320 2N5321 NPN 2N5322 2N5323 PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5320 Series types are Complementary Silicon Power Transistors manufactured by the Epitaxial Planar Process, mounted in a hermetically sealed metal case, designed for amplifier and switching applications. MAXIMUM RATINGS (TC=25C

 9.1. Size:44K  st
2n5320.pdf

2N5321R
2N5321R

2N5320SMALL SIGNAL NPN TRANSISTORDESCRIPTION The 2N5320 is a silicon Epitaxial Planar NPNtransistor in Jedec TO-39 metal case. It isespecially intended for high-voltage mediumpower application in industrial and commercialequipments.The complementary PNP type is the 2N5322TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collecto

 9.2. Size:67K  st
2n5322 2n5323.pdf

2N5321R
2N5321R

2N53222N5323SMALL SIGNAL PNP TRANSISTORS SILICON EPITAXIAL PLANAR PNPTRANSISTORS MEDIUM POWER AMPLIFIER NPN COMPLEMENTS ARE 2N5320 AND2N5321DESCRIPTION The 2N5322 and 2N5323 are silicon epitaxialplanar PNP transistors in Jedec TO-39 metalcase. They are especially intended forhigh-voltage medium power application inindustrial and commercial equipments.TO-39The compl

 9.3. Size:44K  st
2n5322.pdf

2N5321R
2N5321R

2N5322SMALL SIGNAL PNP TRANSISTORDESCRIPTION The 2N5322 is a silicon Epitaxial Planar PNPtransistor in Jedec TO-39 metal case. It isespecially intended for high-voltage mediumpower application in industrial and commercialequipments.The complementary NPN type is 2N5320.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-B

 9.4. Size:59K  semelab
2n5320x.pdf

2N5321R
2N5321R

2N5320X SMALL SIGNAL SILICON NPN MECHANICAL DATA Dimensions in mm (inches) TRANSISTOR 8.51 (0.34)9.40 (0.37)7.75 (0.305)8.51 (0.335)6.10 (0.240)FEATURES 6.60 (0.260) SILICON NPN TRANSISTOR 0.89(0.035)max. METAL CASE (JEDEC TO-39) 12.70(0.500) 0.41 (0.016)min.0.53 (0.021) HIGH SPEED SATURATED SWITCHING dia.5.08 (0.200)typ.2.542(0.100)

 9.5. Size:188K  cdil
2n5320 21 22 23.pdf

2N5321R
2N5321R

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON POWER SWITCHING TRANSISTORS 2N5320, 2N5321 NPN2N5322, 2N5323 PNPTO-39Metal Can PackageMedium Power Amplifier and Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N5320 2N5321 2N5322 2N5323 UNITSVCEOCollector Emitter Voltage 75 50 75 50 VVCBOCollector Base Vol

Другие транзисторы... 2N5320V , 2N5320W , 2N5320Y , 2N5321 , 2N5321BL , 2N5321BR , 2N5321GN , 2N5321O , TIP127 , 2N5321V , 2N5321W , 2N5321Y , 2N5322 , 2N5322BL , 2N5322BR , 2N5322GN , 2N5322O .

 

 
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