2N5322O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5322O
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 75 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Capacitancia de salida (Cc): 40 pF
Ganancia de corriente contínua (hfe): 45
Paquete / Cubierta: TO39
Búsqueda de reemplazo de transistor bipolar 2N5322O
2N5322O Datasheet (PDF)
2n5322 2n5323.pdf
2N53222N5323SMALL SIGNAL PNP TRANSISTORS SILICON EPITAXIAL PLANAR PNPTRANSISTORS MEDIUM POWER AMPLIFIER NPN COMPLEMENTS ARE 2N5320 AND2N5321DESCRIPTION The 2N5322 and 2N5323 are silicon epitaxialplanar PNP transistors in Jedec TO-39 metalcase. They are especially intended forhigh-voltage medium power application inindustrial and commercial equipments.TO-39The compl
2n5322.pdf
2N5322SMALL SIGNAL PNP TRANSISTORDESCRIPTION The 2N5322 is a silicon Epitaxial Planar PNPtransistor in Jedec TO-39 metal case. It isespecially intended for high-voltage mediumpower application in industrial and commercialequipments.The complementary NPN type is 2N5320.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-B
2n5320 2n5321 2n5322 2n5323.pdf
DATA SHEET2N5320 2N5321 NPN 2N5322 2N5323 PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5320 Series types are Complementary Silicon Power Transistors manufactured by the Epitaxial Planar Process, mounted in a hermetically sealed metal case, designed for amplifier and switching applications. MAXIMUM RATINGS (TC=25C
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
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