2N5322O Specs and Replacement
Type Designator: 2N5322O
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 75 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 45
Package: TO39
2N5322O Substitution
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2N5322O datasheet
2N5322 2N5323 SMALL SIGNAL PNP TRANSISTORS SILICON EPITAXIAL PLANAR PNP TRANSISTORS MEDIUM POWER AMPLIFIER NPN COMPLEMENTS ARE 2N5320 AND 2N5321 DESCRIPTION The 2N5322 and 2N5323 are silicon epitaxial planar PNP transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power application in industrial and commercial equipments. TO-39 The compl... See More ⇒
2N5322 SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The 2N5322 is a silicon Epitaxial Planar PNP transistor in Jedec TO-39 metal case. It is especially intended for high-voltage medium power application in industrial and commercial equipments. The complementary NPN type is 2N5320. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-B... See More ⇒
2n5320 2n5321 2n5322 2n5323.pdf ![]()
DATA SHEET 2N5320 2N5321 NPN 2N5322 2N5323 PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5320 Series types are Complementary Silicon Power Transistors manufactured by the Epitaxial Planar Process, mounted in a hermetically sealed metal case, designed for amplifier and switching applications. MAXIMUM RATINGS (TC=25 C ... See More ⇒
Detailed specifications: 2N5321R, 2N5321V, 2N5321W, 2N5321Y, 2N5322, 2N5322BL, 2N5322BR, 2N5322GN, 2SB817, 2N5322R, 2N5322V, 2N5322W, 2N5322Y, 2N5323, 2N5323BL, 2N5323BR, 2N5323GN
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History: 2N5335 | 2N6388 | C45C5 | 2N4057 | 2N4055 | 2SD1266 | SK3842
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