TP5401R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ZXTP5401G150V, SOT223, PNP High voltage transistorSummary BVCEO > -150VBVEBO > -5VIC(cont) = -600mA PD = 2WComplementary part number ZXTN5551GDescriptionCA high voltage PNP transistor in a surface mount packageFeaturesB 150V rating SOT223 packageEApplicationsE High voltage amplificationCCOrdering informationDevice Reel size Tape width Quantit

ZXTP5401Z150V, SOT89, PNP High voltage transistorSummary BVCEO > -150VBVEBO > -5VIC(cont) = -600mA PD = 1.2WComplementary part number ZXTN5551ZDescriptionCA high voltage PNP transistor in a small outline surface mount package.FeaturesB 150V rating SOT89 packageEApplications High voltage amplificationEOrdering informationCCDevice Reel size Tap

A Product Line ofDiodes IncorporatedZXTP5401FL 150V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features and Benefits Mechanical Data BVCEO > -150V Case: SOT23 Maximum Continuous Collector Current IC = -600mA UL Flammability Rating 94V-0 Excellent hFE Characteristics up to IC = -50mA Case material: molded Plastic. Low Saturation Voltages

Spec. No. : C307A3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP5401A3Description The BTP5401A3 is designed for general purpose amplification. Large IC , IC( Max) = -0.6A High BVCEO, BVCEO= -150V Complementary to BTN5551A3. Symbol Outline BTP5401A3TO-92 BBase