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TP5401R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TP5401R
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 150 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 90
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar TP5401R

 

TP5401R Datasheet (PDF)

 8.1. Size:243K  diodes
zxtp5401g.pdf

TP5401R
TP5401R

ZXTP5401G150V, SOT223, PNP High voltage transistorSummary BVCEO > -150VBVEBO > -5VIC(cont) = -600mA PD = 2WComplementary part number ZXTN5551GDescriptionCA high voltage PNP transistor in a surface mount packageFeaturesB 150V rating SOT223 packageEApplicationsE High voltage amplificationCCOrdering informationDevice Reel size Tape width Quantit

 8.2. Size:247K  diodes
zxtp5401z.pdf

TP5401R
TP5401R

ZXTP5401Z150V, SOT89, PNP High voltage transistorSummary BVCEO > -150VBVEBO > -5VIC(cont) = -600mA PD = 1.2WComplementary part number ZXTN5551ZDescriptionCA high voltage PNP transistor in a small outline surface mount package.FeaturesB 150V rating SOT89 packageEApplications High voltage amplificationEOrdering informationCCDevice Reel size Tap

 8.3. Size:187K  diodes
zxtp5401fl.pdf

TP5401R
TP5401R

A Product Line ofDiodes IncorporatedZXTP5401FL 150V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features and Benefits Mechanical Data BVCEO > -150V Case: SOT23 Maximum Continuous Collector Current IC = -600mA UL Flammability Rating 94V-0 Excellent hFE Characteristics up to IC = -50mA Case material: molded Plastic. Low Saturation Voltages

 8.4. Size:153K  cystek
btp5401a3.pdf

TP5401R
TP5401R

Spec. No. : C307A3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP5401A3Description The BTP5401A3 is designed for general purpose amplification. Large IC , IC( Max) = -0.6A High BVCEO, BVCEO= -150V Complementary to BTN5551A3. Symbol Outline BTP5401A3TO-92 BBase

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2G138 | NST65011M

 

 
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History: 2G138 | NST65011M

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