TP5401R Datasheet. Specs and Replacement

Type Designator: TP5401R  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: TO92

 TP5401R Substitution

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TP5401R datasheet

 8.1. Size:243K  diodes

zxtp5401g.pdf pdf_icon

TP5401R

ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC(cont) = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features B 150V rating SOT223 package E Applications E High voltage amplification C C Ordering information Device Reel size Tape width Quantit... See More ⇒

 8.2. Size:247K  diodes

zxtp5401z.pdf pdf_icon

TP5401R

ZXTP5401Z 150V, SOT89, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC(cont) = -600mA PD = 1.2W Complementary part number ZXTN5551Z Description C A high voltage PNP transistor in a small outline surface mount package. Features B 150V rating SOT89 package E Applications High voltage amplification E Ordering information C C Device Reel size Tap... See More ⇒

 8.3. Size:187K  diodes

zxtp5401fl.pdf pdf_icon

TP5401R

A Product Line of Diodes Incorporated ZXTP5401FL 150V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features and Benefits Mechanical Data BVCEO > -150V Case SOT23 Maximum Continuous Collector Current IC = -600mA UL Flammability Rating 94V-0 Excellent hFE Characteristics up to IC = -50mA Case material molded Plastic. Low Saturation Voltages ... See More ⇒

 8.4. Size:153K  cystek

btp5401a3.pdf pdf_icon

TP5401R

Spec. No. C307A3 Issued Date 2003.06.27 CYStech Electronics Corp. Revised Date Page No. 1/4 General Purpose PNP Epitaxial Planar Transistor BTP5401A3 Description The BTP5401A3 is designed for general purpose amplification. Large IC , IC( Max) = -0.6A High BVCEO, BVCEO= -150V Complementary to BTN5551A3. Symbol Outline BTP5401A3 TO-92 B Base ... See More ⇒

Detailed specifications: TP5141, TP5142, TP5143, TP5172, TP5179, TP5400, TP5400R, TP5401, 2SC2655, TP5447, TP5449, TP5550, TP5550R, TP5551, TP5551R, TP5816, TP5855

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