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TP901 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TP901
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 25 V
   Tensión colector-emisor (Vce): 15 V
   Tensión emisor-base (Veb): 2 V
   Corriente del colector DC máxima (Ic): 0.03 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4500 MHz
   Capacitancia de salida (Cc): 1 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar TP901

 

TP901 Datasheet (PDF)

 0.1. Size:287K  jiangsu
tp9014nnd03.pdf

TP901
TP901

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TP9014NND03 TRANSISTOR (1.21.20.5) TOP unit: mm DESCRIPTION B E NPN Epitaxial Silicon Transistor C 1. BASE C FEATURES 2. EMITTER High hFE and good linearity BACK 3. COLLECTOR Complementary to TP9015NND03 E B APPLICATION Pre-Amplifier, Low

 0.2. Size:340K  jiangsu
tp9012nnd03.pdf

TP901
TP901

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9012NND03 TRANSISTOR C WBFBP-03B DESCRIPTION (1.21.20.5) TOP unit: mm PNP Epitaxial Silicon Transistor FEATURES B E Complementary to TP9013NND03 1. BASE C Excellent hFE linearity 2. EMITTER 3. COLLECTOR APPLICATION BACK 150mW Output Amplifier of Potabl

 0.3. Size:305K  jiangsu
tp9013nnd03.pdf

TP901
TP901

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9013NND03 TRANSISTOR DESCRIPTION C NPN Epitaxial Silicon Transistor WBFBP-03B (1.21.20.5) TOP unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to TP9012NND03 B E 1. BASE Excellent hFE linearity. C 2. EMITTER C 3. COLLECTOR APPLICATIO

 0.4. Size:305K  jiangsu
tp9015nnd03.pdf

TP901
TP901

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TP9015NND03 TRANSISTOR C WBFBP-03B DESCRIPTION (1.21.20.5) TOP PNP Epitaxial Silicon Transistor unit: mm FEATURES B E High hFE and good linearity C 1. BASE Complementary to TP9014NND03 C 2. EMITTER BACK APPLICATION 3. COLLECTOR Low Frequency, Low Nois

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2N5846 | 2SC2986O

 

 
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History: 2N5846 | 2SC2986O

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