TP901 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TP901  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 2 V

Corriente del colector DC máxima (Ic): 0.03 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4500 MHz

Capacitancia de salida (Cc): 1 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO92

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TP901 datasheet

 0.1. Size:287K  jiangsu
tp9014nnd03.pdf pdf_icon

TP901

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TP9014NND03 TRANSISTOR (1.2 1.2 0.5) TOP unit mm DESCRIPTION B E NPN Epitaxial Silicon Transistor C 1. BASE C FEATURES 2. EMITTER High hFE and good linearity BACK 3. COLLECTOR Complementary to TP9015NND03 E B APPLICATION Pre-Amplifier, Low

 0.2. Size:340K  jiangsu
tp9012nnd03.pdf pdf_icon

TP901

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9012NND03 TRANSISTOR C WBFBP-03B DESCRIPTION (1.2 1.2 0.5) TOP unit mm PNP Epitaxial Silicon Transistor FEATURES B E Complementary to TP9013NND03 1. BASE C Excellent hFE linearity 2. EMITTER 3. COLLECTOR APPLICATION BACK 150mW Output Amplifier of Potabl

 0.3. Size:305K  jiangsu
tp9013nnd03.pdf pdf_icon

TP901

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9013NND03 TRANSISTOR DESCRIPTION C NPN Epitaxial Silicon Transistor WBFBP-03B (1.2 1.2 0.5) TOP unit mm FEATURES High Collector Current. (IC=500mA) Complementary to TP9012NND03 B E 1. BASE Excellent hFE linearity. C 2. EMITTER C 3. COLLECTOR APPLICATIO

 0.4. Size:305K  jiangsu
tp9015nnd03.pdf pdf_icon

TP901

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TP9015NND03 TRANSISTOR C WBFBP-03B DESCRIPTION (1.2 1.2 0.5) TOP PNP Epitaxial Silicon Transistor unit mm FEATURES B E High hFE and good linearity C 1. BASE Complementary to TP9014NND03 C 2. EMITTER BACK APPLICATION 3. COLLECTOR Low Frequency, Low Nois

Otros transistores... TP706, TP706A, TP708, TP750, TP751, TP753, TP834, TP835, 2SC828, TP911, TP918, TP918R, TP929, TP929A, TP930, TP930A, TP930R