All Transistors. TP901 Datasheet

 

TP901 Datasheet and Replacement


   Type Designator: TP901
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4500 MHz
   Collector Capacitance (Cc): 1 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO92
 

 TP901 Substitution

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TP901 Datasheet (PDF)

 0.1. Size:287K  jiangsu
 tp9014nnd03.pdf pdf_icon

TP901

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TP9014NND03 TRANSISTOR (1.21.20.5) TOP unit: mm DESCRIPTION B E NPN Epitaxial Silicon Transistor C 1. BASE C FEATURES 2. EMITTER High hFE and good linearity BACK 3. COLLECTOR Complementary to TP9015NND03 E B APPLICATION Pre-Amplifier, Low

 0.2. Size:340K  jiangsu
 tp9012nnd03.pdf pdf_icon

TP901

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9012NND03 TRANSISTOR C WBFBP-03B DESCRIPTION (1.21.20.5) TOP unit: mm PNP Epitaxial Silicon Transistor FEATURES B E Complementary to TP9013NND03 1. BASE C Excellent hFE linearity 2. EMITTER 3. COLLECTOR APPLICATION BACK 150mW Output Amplifier of Potabl

 0.3. Size:305K  jiangsu
 tp9013nnd03.pdf pdf_icon

TP901

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9013NND03 TRANSISTOR DESCRIPTION C NPN Epitaxial Silicon Transistor WBFBP-03B (1.21.20.5) TOP unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to TP9012NND03 B E 1. BASE Excellent hFE linearity. C 2. EMITTER C 3. COLLECTOR APPLICATIO

 0.4. Size:305K  jiangsu
 tp9015nnd03.pdf pdf_icon

TP901

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TP9015NND03 TRANSISTOR C WBFBP-03B DESCRIPTION (1.21.20.5) TOP PNP Epitaxial Silicon Transistor unit: mm FEATURES B E High hFE and good linearity C 1. BASE Complementary to TP9014NND03 C 2. EMITTER BACK APPLICATION 3. COLLECTOR Low Frequency, Low Nois

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Datasheet: TP706 , TP706A , TP708 , TP750 , TP751 , TP753 , TP834 , TP835 , B647 , TP911 , TP918 , TP918R , TP929 , TP929A , TP930 , TP930A , TP930R .

History: 2SC4377 | ME2002

Keywords - TP901 transistor datasheet

 TP901 cross reference
 TP901 equivalent finder
 TP901 lookup
 TP901 substitution
 TP901 replacement

 

 
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