UMB2N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UMB2N
Código: B2
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Ganancia de corriente contínua (hfe): 68
Paquete / Cubierta: SC-88
Búsqueda de reemplazo de transistor bipolar UMB2N
UMB2N Datasheet (PDF)
umb2n imb2a b2 sot363 sot23-6.pdf
Transistors General purpose (dual digital transistors) UMB2N / IMB2A FFeatures FExternal dimensions (Units mm) 1) Two DTA144E chips in a UMT or SMT package. 2) Same size as UMT3 or SMT3 pack- age, so same mounting machine can be used for both. 3) Transistor elements are indepen- dent, eliminating interference. FStructure Epitaxial planar type PNP silicon transistor (Built-in res
emb2 umb2n imb2a umb2n.pdf
EMB2 / UMB2N / IMB2A Transistors General purpose (dual digital transistors) EMB2 / UMB2N / IMB2A External dimensions (Unit mm) Features 1) Two DTA144E chips in a EMT or UMT or SMT EMB2 package. (4) ( ) 3 (5) (2) 2) Same size as EMT3 or UMT3 or SMT3 package, so (6) ( ) 1 1.2 same mounting machine can be used for both. 1.6 3) Transistor elements are independent,
umb2nfha.pdf
EMB2 / UMB2N / IMB2A EMB2FHA / UMB2NFHA / IMB2AFRA Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCC -50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R1 47kW EMB2 UMB2N EMB2FHA UMB2NFHA R2 47kW (SC-107C) SOT-353 (SC-88) SM
emb2fha umb2nfha imb2afra.pdf
EMB2 / UMB2N / IMB2A EMB2FHA / UMB2NFHA / IMB2AFRA Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCC -50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R1 47kW EMB2 UMB2N EMB2FHA UMB2NFHA R2 47kW (SC-107C) SOT-353 (SC-88) SM
Otros transistores... UMA6N , UMA7N , UMA8N , UMA9N , UMB10N , UMB11N , UMB16N , UMB1N , 2SC4793 , UMB3N , UMB4N , UMB5N , UMB6N , MMUN2235LT1G , UMB8N , UMB9N , UMC1N .
History: KRA764F | KT644G
Liste
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BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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