UMB2N
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UMB2N
Código: B2
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140
MHz
Ganancia de corriente contínua (hfe): 68
Paquete / Cubierta:
SC-88
Búsqueda de reemplazo de transistor bipolar UMB2N
UMB2N
Datasheet (PDF)
..1. Size:62K rohm
umb2n imb2a b2 sot363 sot23-6.pdf
TransistorsGeneral purpose(dual digital transistors)UMB2N / IMB2AFFeatures FExternal dimensions (Units: mm)1) Two DTA144E chips in a UMT orSMT package.2) Same size as UMT3 or SMT3 pack-age, so same mounting machinecan be used for both.3) Transistor elements are indepen-dent, eliminating interference.FStructureEpitaxial planar typePNP silicon transistor(Built-in res
..2. Size:68K rohm
emb2 umb2n imb2a umb2n.pdf
EMB2 / UMB2N / IMB2A Transistors General purpose (dual digital transistors) EMB2 / UMB2N / IMB2A External dimensions (Unit : mm) Features 1) Two DTA144E chips in a EMT or UMT or SMT EMB2package. (4) ( )3(5) (2)2) Same size as EMT3 or UMT3 or SMT3 package, so (6) ( )11.2same mounting machine can be used for both. 1.63) Transistor elements are independent,
0.1. Size:1295K rohm
umb2nfha.pdf
EMB2 / UMB2N / IMB2AEMB2FHA / UMB2NFHA / IMB2AFRADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC-50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R147kWEMB2 UMB2N EMB2FHA UMB2NFHAR247kW (SC-107C) SOT-353 (SC-88) SM
0.2. Size:1340K rohm
emb2fha umb2nfha imb2afra.pdf
EMB2 / UMB2N / IMB2AEMB2FHA / UMB2NFHA / IMB2AFRADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC-50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R147kWEMB2 UMB2N EMB2FHA UMB2NFHAR247kW (SC-107C) SOT-353 (SC-88) SM
Otros transistores... 2SA1771
, 2SA178
, 2SA1790
, 2SA1791
, 2SA1792
, 2SA1793
, 2SA1794
, 2SA1795
, BC557
, 2SA1799
, 2SA17H
, 2SA18
, 2SA180
, 2SA1800
, 2SA1800O
, 2SA1800R
, 2SA1800Y
.