UMD3N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UMD3N
Código: D3
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: SC88 SOT353
Búsqueda de reemplazo de UMD3N
UMD3N Datasheet (PDF)
emd3 umd3n imd3a umd3n.pdf

EMD3 / UMD3N / IMD3A Transistors General purpose (Dual digital transistors) EMD3 / UMD3N / IMD3A Dimensions (Unit : mm) Features 1) Both the DTA114E chip and DTC114E chip in a EMT EMD3or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (6) (5) (4)automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3)interfer
umd3n imd3a d3 sot23-6sot363.pdf

TransistorsGeneral purpose(dual digital transistors)UMD3N / IMD3AFFeatures FExternal dimensions (Units: mm)1) Both the DTA114E chip andDTC114E chip in a UMT or SMTpackage.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxi
umd3n.pdf

UMD3NNPN-PNP built-in resistors Elektronische BauelementeMulti-Chip Digital TransistorSOT-363o.055(1.40)8.047(1.20)0o .026TYP(0.65TYP)6 5 4 .021REFFeatures(0.525)REF.053(1.35).096(2.45)* DTA114E and DTC114E transistors are .045(1.15).085(2.15)built-in a SOT-363 package. * Transistor elements are independent, .018(0.46)31 2.010(0.26)elim
umd3n.pdf

UMD3N DUAL DIGITAL TRANSISTOR (NPN+ PNP) SOT-363 FEATURES DTA114E and DTC114E transistors are built-in a package. Transistor elements are independent, eliminating interference. 1 Mounting cost and area can be cut in half. External circuit MARKING:D3 Absolute maximum ratings (Ta=25) Parameter Symbol Limits UnitSupply voltage VCC 50 VInput voltage VIN -10~40 VI
Otros transistores... UMC5N , PDTA115EEF , PDTA115EK , UMD10N , PDTA115ES , PDTA115TK , PDTA115TS , UMD2N , TIP127 , UMD6N , PDTA123EEF , UMD9N , UMG11N , PDTA123EK , PDTA123ES , UMG1N , UMG2N .
History: BCY10 | KT644A | BFY50I | BTB718N3 | BLX94C | NB212EX | CEN-U05
History: BCY10 | KT644A | BFY50I | BTB718N3 | BLX94C | NB212EX | CEN-U05



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