UMD3N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: UMD3N
   Código: D3
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 140 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SC88 SOT353

Búsqueda de reemplazo de transistor bipolar UMD3N

UMD3N Datasheet (PDF)

..1. Size:98K rohm
emd3 umd3n imd3a umd3n.pdf

EMD3 / UMD3N / IMD3A Transistors General purpose (Dual digital transistors) EMD3 / UMD3N / IMD3A Dimensions (Unit : mm) Features 1) Both the DTA114E chip and DTC114E chip in a EMT EMD3or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (6) (5) (4)automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3)interfer

..2. Size:92K rohm
umd3n imd3a d3 sot23-6sot363.pdf

TransistorsGeneral purpose(dual digital transistors)UMD3N / IMD3AFFeatures FExternal dimensions (Units: mm)1) Both the DTA114E chip andDTC114E chip in a UMT or SMTpackage.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxi

..3. Size:379K secos
umd3n.pdf

UMD3NNPN-PNP built-in resistors Elektronische BauelementeMulti-Chip Digital TransistorSOT-363o.055(1.40)8.047(1.20)0o .026TYP(0.65TYP)6 5 4 .021REFFeatures(0.525)REF.053(1.35).096(2.45)* DTA114E and DTC114E transistors are .045(1.15).085(2.15)built-in a SOT-363 package. * Transistor elements are independent, .018(0.46)31 2.010(0.26)elim

..4. Size:475K htsemi
umd3n.pdf

UMD3N DUAL DIGITAL TRANSISTOR (NPN+ PNP) SOT-363 FEATURES DTA114E and DTC114E transistors are built-in a package. Transistor elements are independent, eliminating interference. 1 Mounting cost and area can be cut in half. External circuit MARKING:D3 Absolute maximum ratings (Ta=25) Parameter Symbol Limits UnitSupply voltage VCC 50 VInput voltage VIN -10~40 VI

0.1. Size:1403K rohm
emd3fha umd3nfha.pdf

EMD3FHA / UMD3NFHA / IMD3AFRAEMD3 / UMD3N / IMD3ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutline(6)EMT6 UMT6Parameter Value (5)(6) (4) (5) (4)VCC50V(1)(1) (2) (2)IC(MAX.)100mA (3) (3)R110kWEMD3EMD3FHA UMD3NFHAUMD3N(SC-107C)R2 SOT-353 (SC-88)10kWSMT6(4)

0.2. Size:1440K rohm
emd3fha umd3nfha imd3afra.pdf