UMD3N Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UMD3N 📄📄

Código: D3

Material: Si

Polaridad de transistor: Pre-Biased-NPN*PNP

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: SC88 SOT353

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UMD3N datasheet

..1. Size:98K rohm
emd3 umd3n imd3a umd3n.pdf pdf_icon

EMD3 / UMD3N / IMD3A Transistors General purpose (Dual digital transistors) EMD3 / UMD3N / IMD3A Dimensions (Unit mm) Features 1) Both the DTA114E chip and DTC114E chip in a EMT EMD3 or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (6) (5) (4) automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3) interfer

..2. Size:92K rohm
umd3n imd3a d3 sot23-6sot363.pdf pdf_icon

Transistors General purpose (dual digital transistors) UMD3N / IMD3A FFeatures FExternal dimensions (Units mm) 1) Both the DTA114E chip and DTC114E chip in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure Epitaxi

..3. Size:379K secos
umd3n.pdf pdf_icon

UMD3N NPN-PNP built-in resistors Elektronische Bauelemente Multi-Chip Digital Transistor SOT-363 o .055(1.40) 8 .047(1.20) 0o .026TYP (0.65TYP) 6 5 4 .021REF Features (0.525)REF .053(1.35) .096(2.45) * DTA114E and DTC114E transistors are .045(1.15) .085(2.15) built-in a SOT-363 package. * Transistor elements are independent, .018(0.46) 3 1 2 .010(0.26) elim

..4. Size:475K htsemi
umd3n.pdf pdf_icon

UMD3N DUAL DIGITAL TRANSISTOR (NPN+ PNP) SOT-363 FEATURES DTA114E and DTC114E transistors are built-in a package. Transistor elements are independent, eliminating interference. 1 Mounting cost and area can be cut in half. External circuit MARKING D3 Absolute maximum ratings (Ta=25 ) Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -10 40 V I

Otros transistores... UMC5N, PDTA115EEF, PDTA115EK, UMD10N, PDTA115ES, PDTA115TK, PDTA115TS, UMD2N, TIP42, UMD6N, PDTA123EEF, UMD9N, UMG11N, PDTA123EK, PDTA123ES, UMG1N, UMG2N

UMD3N Datasheet. Equivalente