UMH11N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

EMH11 / UMH11N / IMH11A Transistors General purpose (dual digital transistors) EMH11 / UMH11N / IMH11A External dimensions (Unit : mm) Features 1) Two DTC114E chips in a EMT or UMT or SMT EMH11package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3)(5) (2)(6) (1)automatic mounting machines. 1.21.63) Transistor elements are independent, eliminating interf

TransistorsGeneral purpose(dual digital transistors )UMH11N / IMH11AFFeatures FExternal dimensions (Units: mm)1) Two DTC114E chips in a UMT orSMT package.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN

TransistorsGeneral purpose(dual digital transistors )UMH11N / IMH11AFFeatures FExternal dimensions (Units: mm)1) Two DTC114E chips in a UMT orSMT package.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN

MCCTMMicro Commercial ComponentsUMH11NMicro Commercial Components20736 Marilla Street ChatsworthCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Two DTC114E Chips in SOT-363 Package. Transistor elements are independent, eliminating interference Digital Transistors Design For Saving Space and Cost. Lead Free Finish/RoHS Compliant ("P" Suffix d

UMH11N NPN Multi-ChipElektronische BauelementeBuilt-in Resistors TransistorRoHS Compliant ProductSOT-363o.055(1.40)8Features.047(1.20)0o .026TYP(0.65TYP)* Mounting possible with UMT3 automatic mounting .021REF(0.525)REFmachines. * Transistor elements are independent, .053(1.35).096(2.45)eliminating interference. .045(1.15).085(2.15)* Mounting cos

UMH11N General purpose transistors (dual transistors)SOT-363 FEATURES Two DTC114E chip in a package Mounting possible with SOT-363 automatic mounting machines Transistor elements are independent, eliminating interference 1 Mounting cost and area be cut in half Marking: H11 Equivalent circuit Absolute maximum ratings(Ta=25) Parameter Symbol Limits UnitSupply

EMH11 / UMH11N / IMH11AEMH11FHA / UMH11NFHA / IMH11AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R110kWEMH11 UMH11N EMH11FHA UMH11NFHAR210kW (SC-107C) SOT-353 (SC-88)

EMH11 / UMH11N / IMH11AEMH11FHA / UMH11NFHA / IMH11AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R110kWEMH11 UMH11N EMH11FHA UMH11NFHAR210kW (SC-107C) SOT-353 (SC-88)

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageMBD128PUMH11NPN resistor-equipped doubletransistor1999 Apr 13Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped double transistor PUMH11FEATURES Transistors with built-in bias resistors R1 and R2(typ. 10 k each) No mutual interference between t

DISCRETE SEMICONDUCTORS DATA SHEETPEMH11; PUMH11NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 kProduct data sheet 2003 Oct 20Supersedes data of 2001 Oct 22NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH11; PUMH11R1 = 10 k, R2 = 10 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. U

CHENMKO ENTERPRISE CO.,LTDCHUMH11GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-88/SOT-363)SC-88/SOT-363* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cur