UMH11N
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UMH11N
Código: H11
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140
MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
SC88
SOT353
Búsqueda de reemplazo de transistor bipolar UMH11N
UMH11N
Datasheet (PDF)
..1. Size:69K rohm
emh11 umh11n imh11a.pdf
EMH11 / UMH11N / IMH11A Transistors General purpose (dual digital transistors) EMH11 / UMH11N / IMH11A External dimensions (Unit : mm) Features 1) Two DTC114E chips in a EMT or UMT or SMT EMH11package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3)(5) (2)(6) (1)automatic mounting machines. 1.21.63) Transistor elements are independent, eliminating interf
..2. Size:61K rohm
umh11n.pdf
TransistorsGeneral purpose(dual digital transistors )UMH11N / IMH11AFFeatures FExternal dimensions (Units: mm)1) Two DTC114E chips in a UMT orSMT package.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN
..3. Size:62K rohm
umh11n imh11a h11 sot23-6sot363.pdf
TransistorsGeneral purpose(dual digital transistors )UMH11N / IMH11AFFeatures FExternal dimensions (Units: mm)1) Two DTC114E chips in a UMT orSMT package.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN
..4. Size:207K mcc
umh11n.pdf
MCCTMMicro Commercial ComponentsUMH11NMicro Commercial Components20736 Marilla Street ChatsworthCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Two DTC114E Chips in SOT-363 Package. Transistor elements are independent, eliminating interference Digital Transistors Design For Saving Space and Cost. Lead Free Finish/RoHS Compliant ("P" Suffix d
..5. Size:477K secos
umh11n.pdf
UMH11N NPN Multi-ChipElektronische BauelementeBuilt-in Resistors TransistorRoHS Compliant ProductSOT-363o.055(1.40)8Features.047(1.20)0o .026TYP(0.65TYP)* Mounting possible with UMT3 automatic mounting .021REF(0.525)REFmachines. * Transistor elements are independent, .053(1.35).096(2.45)eliminating interference. .045(1.15).085(2.15)* Mounting cos
..6. Size:553K htsemi
umh11n.pdf
UMH11N General purpose transistors (dual transistors)SOT-363 FEATURES Two DTC114E chip in a package Mounting possible with SOT-363 automatic mounting machines Transistor elements are independent, eliminating interference 1 Mounting cost and area be cut in half Marking: H11 Equivalent circuit Absolute maximum ratings(Ta=25) Parameter Symbol Limits UnitSupply
0.1. Size:1292K rohm
emh11fha umh11nfha.pdf
EMH11 / UMH11N / IMH11AEMH11FHA / UMH11NFHA / IMH11AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R110kWEMH11 UMH11N EMH11FHA UMH11NFHAR210kW (SC-107C) SOT-353 (SC-88)
0.2. Size:1336K rohm
emh11fha umh11nfha imh11afra.pdf
EMH11 / UMH11N / IMH11AEMH11FHA / UMH11NFHA / IMH11AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R110kWEMH11 UMH11N EMH11FHA UMH11NFHAR210kW (SC-107C) SOT-353 (SC-88)
9.1. Size:58K philips
pumh11 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageMBD128PUMH11NPN resistor-equipped doubletransistor1999 Apr 13Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped double transistor PUMH11FEATURES Transistors with built-in bias resistors R1 and R2(typ. 10 k each) No mutual interference between t
9.2. Size:137K philips
pemh11 pumh11.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMH11; PUMH11NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 kProduct data sheet 2003 Oct 20Supersedes data of 2001 Oct 22NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH11; PUMH11R1 = 10 k, R2 = 10 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. U
9.3. Size:76K chenmko
chumh11gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHUMH11GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-88/SOT-363)SC-88/SOT-363* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cur
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