UMH11N Datasheet. Specs and Replacement
Type Designator: UMH11N 📄📄
SMD Transistor Code: H11
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SC88
SOT353
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UMH11N datasheet
..1. Size:69K rohm
emh11 umh11n imh11a.pdf 

EMH11 / UMH11N / IMH11A Transistors General purpose (dual digital transistors) EMH11 / UMH11N / IMH11A External dimensions (Unit mm) Features 1) Two DTC114E chips in a EMT or UMT or SMT EMH11 package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3) (5) (2) (6) (1) automatic mounting machines. 1.2 1.6 3) Transistor elements are independent, eliminating interf... See More ⇒
..2. Size:61K rohm
umh11n.pdf 

Transistors General purpose (dual digital transistors ) UMH11N / IMH11A FFeatures FExternal dimensions (Units mm) 1) Two DTC114E chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN... See More ⇒
..3. Size:62K rohm
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Transistors General purpose (dual digital transistors ) UMH11N / IMH11A FFeatures FExternal dimensions (Units mm) 1) Two DTC114E chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN... See More ⇒
..4. Size:207K mcc
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MCC TM Micro Commercial Components UMH11N Micro Commercial Components 20736 Marilla Street Chatsworth CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Two DTC114E Chips in SOT-363 Package. Transistor elements are independent, eliminating interference Digital Transistors Design For Saving Space and Cost. Lead Free Finish/RoHS Compliant ("P" Suffix d... See More ⇒
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UMH11N NPN Multi-Chip Elektronische Bauelemente Built-in Resistors Transistor RoHS Compliant Product SOT-363 o .055(1.40) 8 Features .047(1.20) 0o .026TYP (0.65TYP) * Mounting possible with UMT3 automatic mounting .021REF (0.525)REF machines. * Transistor elements are independent, .053(1.35) .096(2.45) eliminating interference. .045(1.15) .085(2.15) * Mounting cos... See More ⇒
..6. Size:553K htsemi
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UMH11N General purpose transistors (dual transistors) SOT-363 FEATURES Two DTC114E chip in a package Mounting possible with SOT-363 automatic mounting machines Transistor elements are independent, eliminating interference 1 Mounting cost and area be cut in half Marking H11 Equivalent circuit Absolute maximum ratings(Ta=25 ) Parameter Symbol Limits Unit Supply... See More ⇒
0.1. Size:1292K rohm
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EMH11 / UMH11N / IMH11A EMH11FHA / UMH11NFHA / IMH11AFRA Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R1 10kW EMH11 UMH11N EMH11FHA UMH11NFHA R2 10kW (SC-107C) SOT-353 (SC-88) ... See More ⇒
0.2. Size:1336K rohm
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EMH11 / UMH11N / IMH11A EMH11FHA / UMH11NFHA / IMH11AFRA Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R1 10kW EMH11 UMH11N EMH11FHA UMH11NFHA R2 10kW (SC-107C) SOT-353 (SC-88) ... See More ⇒
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMH11 NPN resistor-equipped double transistor 1999 Apr 13 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH11 FEATURES Transistors with built-in bias resistors R1 and R2 (typ. 10 k each) No mutual interference between t... See More ⇒
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DISCRETE SEMICONDUCTORS DATA SHEET PEMH11; PUMH11 NPN/NPN resistor-equipped transistors; R1 = 10 k , R2 = 10 k Product data sheet 2003 Oct 20 Supersedes data of 2001 Oct 22 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; PEMH11; PUMH11 R1 = 10 k , R2 = 10 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. U... See More ⇒
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CHENMKO ENTERPRISE CO.,LTD CHUMH11GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-88/SOT-363) SC-88/SOT-363 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cur... See More ⇒
Detailed specifications: UMG2N, UMG3N, UMG4N, UMG5N, UMG6N, UMG8N, UMG9N, UMH10N, TIP2955, UMH1N, UMH2N, UMH3N, UMH4N, UMH5N, UMH6N, UMH7N, UMH8N
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