UMH9N
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UMH9N
Código: H9
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.21
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140
MHz
Ganancia de corriente contínua (hfe): 68
Paquete / Cubierta:
SC88
SOT353
Búsqueda de reemplazo de transistor bipolar UMH9N
UMH9N
Datasheet (PDF)
..1. Size:62K rohm
umh9n imh9a h9 sot23-6 sot363.pdf
TransistorsGeneral purpose (dual digital transistors)UMH9N / IMH9AFFeatures FExterna dimensions (Units: mm)1) Two DTC114Ys chips in a UMT orSMT package.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN s
..2. Size:67K rohm
emh9 umh9n imh9a umh9n.pdf
EMH9 / UMH9N / IMH9A Transistors General purpose (dual digital transistors) EMH9 / UMH9N / IMH9A External dimensions (Unit : mm) Features 1) Two DTC114Ys chips in a EMT or UMT or SMT EMH9package. (4) (3)2) Mounting possible with EMT3 or UMT3 or SMT3 (5) (2)(6) (1)1.2automatic mounting machines. 1.63) Transistor elements are independent, eliminating interferen
..3. Size:428K secos
umh9n.pdf
UMH9NNPN Multi-ChipElektronische BauelementeBuilt-in Resistors TransistorRoHS Compliant Product SOT-363o .055(1.40)8.047(1.20)0o .026TYP(0.65TYP) .021REF* Features(0.525)REF.053(1.35).096(2.45)* Mounting possible with 3automatic mounting .045(1.15).085(2.15)machines. * Transistor elements are independent, .018(0.46).010(0.26)eliminating interfer
0.1. Size:1291K rohm
emh9fha umh9nfha.pdf
EMH9FHA / UMH9NFHA / IMH9AFRAEMH9 / UMH9N / IMH9ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC50V (4) (4) (1) (1) (2) (2) IC(MAX.)100mA (3) (3) R110kWEMH9FHA UMH9NFHAEMH9 UMH9N R247kW (SC-107C) SOT-353 (SC-88) SMT6
0.2. Size:1335K rohm
emh9fha umh9nfha imh9afra.pdf
EMH9FHA / UMH9NFHA / IMH9AFRAEMH9 / UMH9N / IMH9ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC50V (4) (4) (1) (1) (2) (2) IC(MAX.)100mA (3) (3) R110kWEMH9FHA UMH9NFHAEMH9 UMH9N R247kW (SC-107C) SOT-353 (SC-88) SMT6
Otros transistores... 2N3200
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