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UMH9N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UMH9N
   Código: H9
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Ganancia de corriente contínua (hfe): 68
   Paquete / Cubierta: SC88 SOT353

 Búsqueda de reemplazo de transistor bipolar UMH9N

 

UMH9N Datasheet (PDF)

 ..1. Size:62K  rohm
 umh9n imh9a h9 sot23-6 sot363.pdf pdf_icon

UMH9N

Transistors General purpose (dual digital transistors) UMH9N / IMH9A FFeatures FExterna dimensions (Units mm) 1) Two DTC114Ys chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN s

 ..2. Size:67K  rohm
 emh9 umh9n imh9a umh9n.pdf pdf_icon

UMH9N

EMH9 / UMH9N / IMH9A Transistors General purpose (dual digital transistors) EMH9 / UMH9N / IMH9A External dimensions (Unit mm) Features 1) Two DTC114Ys chips in a EMT or UMT or SMT EMH9 package. (4) (3) 2) Mounting possible with EMT3 or UMT3 or SMT3 (5) (2) (6) (1) 1.2 automatic mounting machines. 1.6 3) Transistor elements are independent, eliminating interferen

 ..3. Size:428K  secos
 umh9n.pdf pdf_icon

UMH9N

UMH9N NPN Multi-Chip Elektronische Bauelemente Built-in Resistors Transistor RoHS Compliant Product SOT-363 o .055(1.40) 8 .047(1.20) 0o .026TYP (0.65TYP) .021REF * Features (0.525)REF .053(1.35) .096(2.45) * Mounting possible with 3automatic mounting .045(1.15) .085(2.15) machines. * Transistor elements are independent, .018(0.46) .010(0.26) eliminating interfer

 0.1. Size:1291K  rohm
 emh9fha umh9nfha.pdf pdf_icon

UMH9N

EMH9FHA / UMH9NFHA / IMH9AFRA EMH9 / UMH9N / IMH9A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCC 50V (4) (4) (1) (1) (2) (2) IC(MAX.) 100mA (3) (3) R1 10kW EMH9FHA UMH9NFHA EMH9 UMH9N R2 47kW (SC-107C) SOT-353 (SC-88) SMT6

MOSTRAR MÁS

Otros transistores... UMH1N , UMH2N , UMH3N , UMH4N , UMH5N , UMH6N , UMH7N , UMH8N , TIP142 , UMS1N , UMS2N , UMT1006 , UMT1007 , UMT1008 , UMT1009 , UMT1011 , UMT1012 .

 

 
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