UMX1N
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UMX1N
Código: X1
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 0.15
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180
MHz
Capacitancia de salida (Cc): 2
pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta:
SC88
SOT353
Búsqueda de reemplazo de transistor bipolar UMX1N
UMX1N
Datasheet (PDF)
..1. Size:92K rohm
emx1 umx1n imx1 umx1n.pdf
EMX1 / UMX1N / IMX1TransistorsGeneral purpose transistors(dual transistors)EMX1 / UMX1N / IMX1 Features External dimensions (Units : mm)1) Two 2SC2412K chips in a EMT or UMT or SMTEMX1package.(4) (3)2) Mounting possible with EMT3 or UMT3 or SMT3(5) (2)(6) (1)1.2automatic mounting machines.1.63) Transistor elements are independent, eliminating interference.Eac
..2. Size:1977K rohm
emx1 umx1n imx1.pdf
EMX1 / UMX1N / IMX1DatasheetGeneral purpose transistor (dual transistors)lOutlinelParameter Tr1 and Tr2 SOT-563 SOT-363VCEO50VIC150mA EMX1 UMX1N(EMT6) (UMT6) SOT-457 lFeaturesl1) Two 2SC2412K chips in a EMT, UMT or SMT package. IMX12) Mounting p
..3. Size:112K rohm
umx1n imx1 x1 sot23-6 sot363.pdf
TransistorsGeneral purpose transistor (dual transistors)UMX1N / IMX1FFeatures FExternal dimensions (Units: mm)1) Two 2SC2412K chips in a UMT orSMT package.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNP
..4. Size:479K secos
umx1n.pdf
UMX1N Dual NPN General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-363 Two 2SC2412K chips in a package. Mounting possible with SOT-363 automatic mounting machines. A Transistor elements are independent, eliminating EL6 5 4interference. Mounting cost and area ca
..5. Size:2414K jiangsu
umx1n.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors J C T UMX1N DUAL TRANSISTOR (NPN+NPN) FEATURES SOT-363 Two 2SC2412K chips in a SOT-563 package Mounting possible with SOT-563 automatic mounting machines Transistor elements are independent, eliminating interference Mounting cost and area can be cut in half MARKING:X1 MAXI
..6. Size:274K first silicon
umx1n.pdf
SEMICONDUCTORUMX1NTECHNICAL DATADual General Purpose TransistorsNPN Duals These transistors are designed for general purpose amplifier65applications. They are housed in the SOT363/SC88 which is4designed for low power surface mount applications.1236 54SOT-363/SC-881FQ2Q112 3Q1 MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCol
..7. Size:365K cn yangzhou yangjie elec
umx1n.pdf
RoHS COMPLIANT UMX1NDual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:X1 Equivalent circuit 1 / 5 S-S3179 Yangzhou Yan
0.1. Size:967K rohm
umx1nfha.pdf
EMX1FHA / UMX1NFHA / IMX1AEC-Q101 Qualified EMX1FHA / UMX1NFHA / IMX1
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