Биполярный транзистор UMX1N - описание производителя. Основные параметры. Даташиты.
Наименование производителя: UMX1N
Маркировка: X1
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 180 MHz
Ёмкость коллекторного перехода (Cc): 2 pf
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: SC88 SOT353
UMX1N Datasheet (PDF)
emx1 umx1n imx1 umx1n.pdf
EMX1 / UMX1N / IMX1TransistorsGeneral purpose transistors(dual transistors)EMX1 / UMX1N / IMX1 Features External dimensions (Units : mm)1) Two 2SC2412K chips in a EMT or UMT or SMTEMX1package.(4) (3)2) Mounting possible with EMT3 or UMT3 or SMT3(5) (2)(6) (1)1.2automatic mounting machines.1.63) Transistor elements are independent, eliminating interference.Eac
emx1 umx1n imx1.pdf
EMX1 / UMX1N / IMX1DatasheetGeneral purpose transistor (dual transistors)lOutlinelParameter Tr1 and Tr2 SOT-563 SOT-363VCEO50VIC150mA EMX1 UMX1N(EMT6) (UMT6) SOT-457 lFeaturesl1) Two 2SC2412K chips in a EMT, UMT or SMT package. IMX12) Mounting p
umx1n imx1 x1 sot23-6 sot363.pdf
TransistorsGeneral purpose transistor (dual transistors)UMX1N / IMX1FFeatures FExternal dimensions (Units: mm)1) Two 2SC2412K chips in a UMT orSMT package.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNP
umx1n.pdf
UMX1N Dual NPN General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-363 Two 2SC2412K chips in a package. Mounting possible with SOT-363 automatic mounting machines. A Transistor elements are independent, eliminating EL6 5 4interference. Mounting cost and area ca
umx1n.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors J C T UMX1N DUAL TRANSISTOR (NPN+NPN) FEATURES SOT-363 Two 2SC2412K chips in a SOT-563 package Mounting possible with SOT-563 automatic mounting machines Transistor elements are independent, eliminating interference Mounting cost and area can be cut in half MARKING:X1 MAXI
umx1n.pdf
SEMICONDUCTORUMX1NTECHNICAL DATADual General Purpose TransistorsNPN Duals These transistors are designed for general purpose amplifier65applications. They are housed in the SOT363/SC88 which is4designed for low power surface mount applications.1236 54SOT-363/SC-881FQ2Q112 3Q1 MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCol
umx1n.pdf
RoHS COMPLIANT UMX1NDual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:X1 Equivalent circuit 1 / 5 S-S3179 Yangzhou Yan
umx1nfha.pdf
EMX1FHA / UMX1NFHA / IMX1AEC-Q101 Qualified EMX1FHA / UMX1NFHA / IMX1
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050