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UN2116S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UN2116S
   Código: 6F
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 4.7 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 80 MHz
   Ganancia de corriente contínua (hfe): 290
   Paquete / Cubierta: SOT23 SC59
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UN2116S Datasheet (PDF)

 ..1. Size:375K  panasonic
un2110q un2110r un2110s un2111 un2112 un2113 un2114 un2115q un2115r un2115s un2116q un2116r un2116s un2117q un2117r un2117s.pdf pdf_icon

UN2116S

Transistors with built-in ResistorUNR211x Series (UN211x Series)Silicon PNP epitaxial planar typeUnit: mm0.40+0.100.05For digital circuits0.16+0.100.063 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts1 2 Mini type package allowing easy automatic insertion through tape(0.95) (0.95)packing and mag

 8.1. Size:134K  onsemi
mun2116.pdf pdf_icon

UN2116S

MUN2116, MMUN2116L,MUN5116, DTA143TE,DTA143TM3, NSBA143TF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 8 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

 8.2. Size:212K  onsemi
mun2111t1g mun2112t1g mun2113t1g mun2114t1g mun2115t1g mun2116t1g mun2130t1g mun2131t1g mun2132t1g mun2133t1g mun2134t1g mun2136t1g mun2137t1g mun2140t1g.pdf pdf_icon

UN2116S

MUN2111T1 Series,SMUN2111T1 SeriesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. TheBias Resistor Transistor (BRT) contains a single transistor with amonolithic bias network consisting of two r

 8.3. Size:353K  lrc
lmun2111lt1g lmun2112lt1g lmun2113lt1g lmun2114lt1g lmun2115lt1g lmun2116lt1g lmun2130lt1g lmun2131lt1g lmun2132lt1g lmun2133lt1g lmun2134lt1g lmun2136lt1g lmun2137lt1g lmun2138lt1g lmun2140lt1g.pdf pdf_icon

UN2116S

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLMUN2110LT1GPNP Silicon Surface Mount TransistorsSerieswith Monolithic Bias Resistor Network3This new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor1Transistor) contains a single transistor with a monolithic bias network2consisting of two

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BDX25-6 | DTC143ZET1G | DTC143ZKAFRA | HN1C26FS | BFQ268 | 2SB1216S-TL-E | 30A02MH-TL-H

 

 
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