UN5215S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UN5215S
Código: 8E
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Ganancia de corriente contínua (hfe): 290
Paquete / Cubierta: SOT323 SC70
Búsqueda de reemplazo de transistor bipolar UN5215S
UN5215S Datasheet (PDF)
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Transistors with built-in ResistorUN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/521D/521E/521F/521K/521L/521M/521N/521T/521V/521ZSilicon NPN epitaxial planer transistorUnit: mmFor digital circuits2.1 0.10.425 1.25 0.1 0.425FeaturesCosts can be reduced through downsizing of the equipment and1reduction of the number of parts.3S-Mini type package, allowing autom
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LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorLMUN5211T1GNPN Silicon Surface Mount TransistorSerieswith Monolithic Bias Resistor Network3This new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor1Transistor) contains a single transistor with a monolithic bias network con- 2sisting of two r
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